DMT6015LFV 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (TYPE UX) Product Summary Features and Benefits Low R Ensures On-State Losses are Minimized I Max DS(ON) D BV R Max DSS DS(ON) T = +25C Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 16m V = 10V GS 35A Occupies just 33% of the Board Area Occupied by SO-8 Enabling 60V Smaller End Product 22m V = 4.5V 28A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 3333-8 (Type UX) (R ), yet maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound. DS(ON) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminal Connections Indicator: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UX) Pin1 D S S S G G D Gate Protection D S Diode D D Internal Schematic Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMT6015LFV-7 2,000/Tape & Reel PowerDI3333-8 (Type UX) DMT6015LFV-13 3,000/Tape & Reel PowerDI3333-8 (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT6015LFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 16 V GSS T = +25C A 9.5 A I D 7.6 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 35 C I A D 22 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 60 A DM Maximum Continuous Body Diode Forward Current (Note 5) I 2 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 60 A I SM Avalanche Current, L = 0.1mH 17 A I AS Avalanche Energy, L = 0.1mH 14.5 mJ E AS t = 10s 75 V V Spike V DS SPIKE Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.2 W T = +25C A Total Power Dissipation (Note 5) P D 30 W T = +25C C Steady State 57 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 35 C/W Thermal Resistance, Junction to Case (Note 5) 4.2 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A IDSS VDS = 48V, VGS = 0V Gate-Source Leakage 10 A I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 0.5 2.5 V V V = V , I = 250A GS(TH) DS GS D 11.7 16 V = 10V, I = 10A GS D Static Drain-Source On-Resistance R m DS(ON) 15.7 22 V = 4.5V, I = 6A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 1103 pF iss V = 30V, V = 0V, DS GS Output Capacitance C 251 pF oss f = 1MHz Reverse Transfer Capacitance C 20 pF rss Gate Resistance R 1.5 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 8.9 nC GS g 18.9 nC Total Gate Charge (VGS = 10V) Qg V = 30V, I = 10A DS D Gate-Source Charge 3 nC Q gs Gate-Drain Charge 2.8 nC Q gd Turn-On Delay Time 4.1 ns t D(ON) Turn-On Rise Time 7.1 ns t V = 10V, V = 30V, R GS DS Turn-Off Delay Time t 19.5 ns R = 6, I = 10A D(OFF) g D Turn-Off Fall Time t 8.6 ns F Body Diode Reverse Recovery Time t 21.2 ns RR I = 10A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 13.2 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMT6015LFV March 2018 Diodes Incorporated www.diodes.com Document number: DS38454 Rev. 5 - 2 ADVANCE INFORMATION