BC856AS 65V DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BV > -65V Case: SOT363 CEO I = -100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. C Complementary NPN Types Available (BC846AS) UL Flammability Classification Rating 94V-0 For Switching and AF Amplifier Applications Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish Matte Tin Finish. Solderable per MIL-STD- e3 Halogen- and Antimony-Free. Green Device (Note 3) 202, Method 208 For automotive applications requiring specific change Weight: 0.006 grams (Approximate) control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. BC856AS Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage -65 V V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current I -100 mA C Peak Collector Current I -200 mA CM Peak Emitter Current I -200 mA EM Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient (Note 5) 625 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 5) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -80 V I = -100A CBO C Collector-Emitter Breakdown Voltage BV -65 V I = -10mA CEO C Emitter-Base Breakdown Voltage BV -5 V I = -100A EBO E DC Current Gain h 125 180 250 V = -5.0V, I = -2.0mA FE CE C -75 -300 I = -10mA, I = -0.5mA C B Collector-Emitter Saturation Voltage V mV CE(sat) -250 -650 I = -100mA, I = -5.0mA C B -700 I = -10mA, I = -0.5mA C B Base-Emitter Saturation Voltage V mV BE(sat) -850 I = -100mA, I = -5.0mA C B -600 -650 -750 V = -5.0V, I = -2.0mA CE C Base-Emitter Voltage V mV BE(on) -820 V = -5.0V, I = -10mA CE C I V = -80V CES -15 nA CE Collector-Cutoff Current -15 nA I V = -30V CBO CB -4.0 A I V = -30V, T = +150C CBO CB A V = -5.0V, I = -10mA, CE C Gain Bandwidth Product 100 MHz f T f = 100MHz Collector-Base Capacitance C 3 pF V = -10V, f = 1.0MHz CB CB Notes: 5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Short duration pulse test used to minimize self-heating effect 2 of 6 May 2021 BC856AS Diodes Incorporated www.diodes.com Document number: DS30834 Rev. 10 - 2