Product Information

MTP2301N3

MTP2301N3 electronic component of CYSTECH

Datasheet
MOSFET P Trench 20V 3.4A 450mV @ 250uA(Min) 100 mΩ @ 2.8A,4.5V SOT-23 RoHS

Manufacturer: CYSTECH
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0875 ea
Line Total: USD 0.875

0 - Global Stock
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 10
Multiples : 10

Stock Image

MTP2301N3
CYSTECH

10 : USD 0.0848
100 : USD 0.0692
300 : USD 0.0615
3000 : USD 0.0497
6000 : USD 0.045
9000 : USD 0.0428

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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ElectricalThe MTP2301N3 MOSFET P Trench 20V 3.4A 450mV @ 250uA (Min) 100 mO @ 2.8A,4.5V SOT-23 RoHS is a surface-mount power switch manufactured by Cystech Electrical. This product has a maximum voltage of 20V, a maximum current of 3.4A, and an on-state resistance of 100 mO @ 2.8A with a minimum gate-source voltage of 4.5V. It is RoHS compliant and is packaged in the SOT-23 form factor. The maximum drain-source breakdown voltage is 20V and the maximum continuous drain current is 3.4A with a maximum pulsed drain current of 5.8A. Its avalanche energy is 4mJ min and the threshold voltage is 450mV @ 250uA. This product has a dynamic gate charge of 16.8 nC at VGS = 4.5V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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