Product Information

CY7C1360C-200BGC

CY7C1360C-200BGC electronic component of Infineon

Datasheet
SRAM 9Mb 200Mhz 256K x 36 Pipelined SRAM

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 21.9375 ea
Line Total: USD 21.94

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Tue. 07 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 21.9375
10 : USD 20.3125
25 : USD 19.236
50 : USD 18.996
100 : USD 16.968
168 : USD 16.68
1008 : USD 16.668

     
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Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY7C1360C CY7C1362C 9-Mbit (256K 36/512K 18) Pipelined SRAM 9-Mbit (256K 36/512K 18) Pipelined SRAM Features Functional Description Supports bus operation up to 200 MHz The CY7C1360C/CY7C1362C SRAM integrates 256K 36 and 512K 18 SRAM cells with advanced synchronous peripheral Available speed grades: 200 MHz, and 166 MHz circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a Registered inputs and outputs for pipelined operation positive-edge-triggered clock input (CLK). The synchronous 3.3 V core power supply (V ) DD inputs include all addresses, all data inputs, address-pipelining chip enable (CE ), depth-expansion chip enables (CE and 1 2 2.5 V/3.3 V I/O operation (V ) DDQ 1 CE ), burst control inputs (ADSC, ADSP, ADV), write and 3 Fast clock-to-output times enables (BW , and BWE), and global write (GW). Asynchronous X inputs include the output enable (OE) and the ZZ pin. 3.0 ns (for 200 MHz device) Addresses and chip enables are registered at the rising edge of Provide high performance 3-1-1-1 access rate clock when either address strobe processor (ADSP) or address User selectable burst counter supporting Intel Pentium strobe controller (ADSC) are active. Subsequent burst interleaved or linear burst sequences addresses can be internally generated as controlled by the advance pin (ADV). Separate processor and controller address strobes Address, data inputs, and write controls are registered on-chip Synchronous self-timed writes to initiate a self-timed write cycle.This part supports byte write operations (see Pin Definitions on page 8 and Truth Table on Asynchronous output enable page 11 for further details). Write cycles can be one to two or four Single cycle chip deselect bytes wide as controlled by the byte write control inputs. GW when active LOW cause s all bytes to be written. Available in Pb-free 100-pin TQFP package, non Pb-free The CY7C1360C/CY7C1362C operate from a +3.3 V core power 119-ball BGA package, and 165-ball FBGA package supply while all outputs may operate with either a +2.5 or +3.3 V TQFP available with 3-chip enable and 2-chip enable supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible. IEEE 1149.1 JTAG-compatible boundary scan For a complete list of related documentation, click here. Selection Guide Description 200 MHz 166 MHz Unit Maximum access time 3.0 3.5 ns Maximum operating current 220 180 mA Maximum CMOS standby current 40 40 mA Note 1. CE is for A version of TQFP (3 Chip Enable option) and 165-ball FBGA package only. 119-ball BGA is offered only in 2 Chip Enable. 3 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05540 Rev. *U Revised March 22, 2019

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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