CY62158ELL-45ZSXI

Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.com CY62158E MoBL 8-Mbit (1 M 8) Static RAM 8-Mbit (1 M 8) Static RAM applications. The device also has an automatic power down Features feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption Very high speed: 45 ns significantly when deselected (CE HIGH or CE LOW). 1 2 Wide voltage range: 4.5 V5.5 V To write to the device, take Chip Enables (CE LOW and CE 1 2 Ultra low active power HIGH) and Write Enable (WE) input LOW. Data on the eight I/O Typical active current:1.8 mA at f = 1 MHz pins (I/O through I/O ) is then written into the location specified 0 7 Typical active current: 18 mA at f = f max on the address pins (A through A ). 0 19 Ultra low standby power To read from the device, take Chip Enables (CE LOW and CE 1 2 Typical standby current: 2 A HIGH) and OE LOW while forcing the WE HIGH. Under these conditions, the contents of the memory location specified by the Maximum standby current: 8 A address pins appear on the I/O pins. Easy memory expansion with CE , CE and OE features 1 2 The eight input and output pins (I/O through I/O ) are placed in 0 7 Automatic power down when deselected a high impedance state when the device is deselected (CE 1 HIGH or CE LOW), the outputs are disabled (OE HIGH), or a 2 CMOS for optimum speed and power write operation is in progress (CE LOW and CE HIGH and WE 1 2 Offered in Pb-free 44-pin TSOP II package LOW). See the Truth Table on page 11 for a complete description of read and write modes. Functional Description The CY62158E device is suitable for interfacing with processors that have TTL I/P levels. It is not suitable for processors that The CY62158E MoBL is a high performance CMOS static RAM require CMOS I/P levels. Please see Electrical Characteristics organized as 1024K words by 8 bits. This device features on page 4 for more details and suggested alternatives. advanced circuit design to provide ultra low active current. This For a complete list of related documentation, click here. is ideal for providing More Battery Life (MoBL ) in portable Logic Block Diagram A I/O 0 DATA IN DRIVERS IO 0 0 A 1 A I/O 2 IO 1 1 A 3 A I/O 4 IO 2 2 A 5 A I/O 6 1024K x 8 IO 3 3 A 7 A I/O 8 ARRAY IO 4 4 A 9 A 10 I/O IO 5 5 A 11 A 12 I/O IO 6 6 CE 1 I/O IO CE POWER 7 7 2 COLUMN DECODER WE DOWN OE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05684 Rev. *L Revised July 20, 2015 ROW DECODER A 13 A 14 A 15 A 16 A 17 A 18 A 19 SENSE AMPS