Product Information

CDBU00340

CDBU00340 electronic component of Comchip

Datasheet
Schottky Diodes & Rectifiers 30mA 40V Sm. Sgnl. Schottky

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1825 ea
Line Total: USD 0.1825

75 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
75 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

Stock Image

CDBU00340
Comchip

1 : USD 0.1825
10 : USD 0.1789
25 : USD 0.1789
50 : USD 0.1789

395760 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 4000
Multiples : 4000

Stock Image

CDBU00340
Comchip

4000 : USD 0.207
100000 : USD 0.2029

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Maximum Operating Temperature
Series
Packaging
Termination Style
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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SMD Schottky Barrier Diode CDBU00340-HF Io = 30 mA VR = 40 Volts RoHS Device Halogen Free 0603/SOD-523F Features 0.071(1.80) 0.063(1.60) -Designed for mounting on small surface. -Extremely thin package. 0.039(1.00) 0.031(0.80) -Low stored charge. -Majority carrier conduction. Mechanical data 0.033(0.85) 0.027(0.70) -Case: 0603/SOD-523F standard package, molded plastic. 0.014(0.35) Typ. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. 0.012 (0.30) Typ. -Marking code: cathode band & B2 -Mounting position: Any 0.028(0.70) Typ. -Weight: 0.003 gram(approx.). Dimensions in inches and (millimeter) O Maximum Rating (at TA=25 C unless otherwise noted) Symbol Typ Parameter Max Unit Conditions Min Repetitive peak reverse voltage 45 VRRM V Reverse voltage VR 40 V Average forward current IO 30 mA 8.3 ms single half sine-wave superimposed Forward current,surge peak IFSM 500 mA on rate load(JEDEC method) Power Dissipation PD 150 mW O Sunction temperature TSTG -40 +125 C O Junction temperature Tj +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Typ Symbol Parameter Conditions Min Max Unit Forward voltage IF = 1 mA DC VF 0.37 V VR = 30V 0.50 Reverse current IR uA VR = 40V 1.00 Capacitance between terimnals F = 1 MHZ and 1 VDC reverse voltage CT 1.5 pF REV:A QW-G1002 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBU00340-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 100m 100u O 125 C 10m 10u O 75 C 1m 1u O 25 C 100n 100u 10n O -25 C 1n 10u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 25 30 35 40 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 10 Mounting on glass epoxy PCBs f = 1 MHz 100 Ta = 25 C 80 1 60 40 20 0 0.1 0 5 10 20 25 30 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:A QW-G1002 Page 2 Comchip Technology CO., LTD. 15 O 25 C O 125 C O -25 C O 75 C Capacitance between terminals (PF) Forward current (A ) Average forward current(%) Reverse current ( A )

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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