Product Information

CDBQR70-HF

CDBQR70-HF electronic component of Comchip

Datasheet
Schottky Diodes & Rectifiers VR=70V, IO=70mA

Manufacturer: Comchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.083 ea
Line Total: USD 415

101850 - Global Stock
Ships to you between
Wed. 01 May to Tue. 07 May
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
126100 - Global Stock


Ships to you between Wed. 01 May to Tue. 07 May

MOQ : 5000
Multiples : 5000

Stock Image

CDBQR70-HF
Comchip

5000 : USD 0.1794
30000 : USD 0.1758

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Operating Temperature Range
Termination Style
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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SMD Schottky Barrier Diode CDBQR70-HF Io = 70 mA VR = 70 Volts RoHS Device Halogen Free 0402/SOD-923F Features 0.041(1.05) 0.037(0.95) -Low forward voltage. -Designed for mounting on small surface. 0.026(0.65) 0.022(0.55) -Extremely thin/leadless package. -Majority carrier conduction. Mechanical data 0.022(0.55) 0.018(0.45) -Case: 0402/SOD-923F standard package, 0.012(0.30) Typ. molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking Code: Cathode band & BG 0.020(0.50) Typ. -Mounting position: Any -Weight: 0.001 gram(approx.). Dimensions in inches and (millimeter) O Maximum Rating (at TA=25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Peak reverse voltage VRM 70 V Reverse voltage VR 70 V RMS reverse voltage VR(RMS) 49 V Average forward rectified current IO 70 mA 8.3 ms single half sine-wave superimposed Forward current,surge peak IFSM 0.1 A on rate load(JEDEC method) Power dissipation PD 125 mW O Storage temperature TSTG -65 +125 C O Junction temperature Tj +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Typ Symbol Parameter Conditions Min Max Unit IF = 1mA 0.41 Forward voltage VF V IF = 15mA 1 Reverse current VR = 50V IR 0.1 uA Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage pF CT 2 Reverse recovery time IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm Trr 5 nS REV:B QW-G1103 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQR70-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 100 100u O 125 C 10u O 75 C 10 1u 100n O 25 C 1 10n O 0 C 1n O -40 C 0.1 0.1n 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 2.0 120 f=1MHz Mounting on glass epoxy PCBs 1.8 O TA=25 C 100 1.6 1.4 80 1.2 60 1.0 0.8 40 0.6 0.4 20 0.2 0 0 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:B QW-G1103 Page 2 Comchip Technology CO., LTD. O -40 C O 0 C O 25 C O 75 C O 125 C Capacitance between terminals (PF) Forward current (mA ) Average forward current(%) Reverse current ( A )

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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