Product Information

UMT1N

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Datasheet
Transistors (NPN/PNP) 2 PNP(Double) 150mA 50V SC-70-6 (SOT-363) RoHS
Manufacturer: Changjiang



Price (Ex GST)

From 0.074

2320 - Global Stock
Ships to you between
Tue. 22 Jun to Mon. 28 Jun

MOQ: 10 Multiples:10
Pack Size :   10
Availability Price Quantity
2320 - Global Stock


Ships to you between Tue. 22 Jun to Mon. 28 Jun

MOQ : 10
Multiples : 10

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UMT1N
Changjiang

10 : $ 0.1149
100 : $ 0.0874
300 : $ 0.0825
1000 : $ 0.0774
5000 : $ 0.0752
10000 : $ 0.074

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Manufacturer
Changjiang
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
SC-70-6 (SOT-363)
Brand Category
Changjiang
Transistor Type
2 Pnp(Double)
Current - Collector Ic Max
150 mA
Voltage - Collector Emitter Breakdown Max
50 V
Power - Max
150 mW
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors JC ( T UMT1N DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES z Two 2SA1037AK chips in a package z Mounting possible with SOT-363 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. Marking: T1 Absolute maximum ratings (Ta=25) Symbol Parameter Limits Units Collector-Base Voltage -60 V V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -Continuous -150 mA C P Collector Dissipation 150 mW C T Junction temperature 150 j Storage Temperature -55~+150 T stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-50A,I=0 -60 V (BR)CBO C E Collector-emitter breakdown Voltage V I =-1mA,I=0 -50 V (BR)CEO C B Emitter-base breakdown voltage V I =-50A,I=0 -6 V (BR)EBO E C Collector cut-off current I V =-60V,I=0 -0.1uA CBO CB E Emitter cut-off current I V =-6V,I=0 -0.1uA EBO EB C DC current gain h V =-6V,I=-1mA 120 560 FE CE C Collector-emitter saturation voltage V I =-50mA,I=-5mA -0.5V CE(sat) C B V =-12V,I =2mA, CE E Transition frequency f 140 MHz T f=100MHz Output capacitance Cob V =-12V,I =0, f=1MHz 5 pF CB E www.cj-elec.comwww.cj-elec.com 1 E,Mar,2016 B,Nov,2011 Typical Characteristics I h C Static Characteristic FE -7 1000 COMMON EMITTER T =25 a -6 T =100 a -20uA -18uA -5 T =25 -16uA a -14uA -4 100 -12uA -3 -10uA -8uA -2 -6uA -4uA -1 COMMON EMITTER I =-2uA B V =-6V CE -0 10 -0 -2 -4 -6 -8 -10 -12 -0.1 -1 -10 -100 -150 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) C CE V I V I BEsat C CEsat C -1000 -1000 -800 T =25 a -100 T =100 a -600 T =25 a T =100 a =10 =10 -400 -10 -0.1 -1 -10 -100 -150 -0.1 -1 -10 -100 -150 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V f I C BE T C 1000 -150 -100 100 -10 10 -1 V = -12V COMMON EMITTER CE V =-6V T =25 a CE -0.1 1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -80 -0.5 COLLECTOR CURRENT I (mA) BASE-EMMITER VOLTAGE V (V) C BE C / C V / V P T ob ib CB EB C a 100 200 f=1MHz I =0/I =0 E C T =25 a 150 10 C ib C ob 100 1 50 0.1 0 -20 -0.1 -1 -10 0 25 50 75 100 125 150 COLLECTOR-BASE VOLTAGE V / V (V) AMBIENT TEMPERATURE T ( ) CB EB a www.cj-elec.comwww.cj-elec.com 2 E,Mar,2016 T =100 a T =25 a BASE-EMITTER SATURATION COLLECTOR CURRENT I (mA) C OUTPUT CAPACITANCE C / C (pF) COLLECTOR CURRENT I (mA) VOLTAGE V (sat) (mV) ob ib C BE COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION TRANSITION FREQUENCY f (MHz) DC CURRENT GAIN h T VOLTAGE V (mV) FE CEsat P (mW) C

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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