Product Information

S9014

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Datasheet
Transistors (NPN/PNP) NPN 100mA 45V SOT-23 (SOT-23-3) RoHS
Manufacturer: Changjiang



Price (Ex GST)

From 0.0284

298000 - Global Stock
Ships to you between
Fri. 06 Aug to Thu. 12 Aug
MOQ: 50 Multiples:50
Pack Size :   50
Availability Price Quantity
15220 - Global Stock


Ships to you between Fri. 06 Aug to Thu. 12 Aug

MOQ : 20
Multiples : 20

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S9014
Changjiang

20 : $ 0.3497
200 : $ 0.2682
600 : $ 0.2532
2000 : $ 0.2382
10000 : $ 0.2315
20000 : $ 0.2282

524750 - Global Stock


Ships to you between Fri. 06 Aug to Thu. 12 Aug

MOQ : 50
Multiples : 50

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S9014
Changjiang

50 : $ 0.2221
500 : $ 0.1736
1500 : $ 0.1646
5000 : $ 0.1557
25000 : $ 0.1518
50000 : $ 0.1498

     
Manufacturer
Changjiang
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
SOT-23 (SOT-23-3)
Brand Category
Changjiang
Transistor Type
Npn
Current - Collector Ic Max
100 mA
Voltage - Collector Emitter Breakdown Max
45 V
Power - Max
200 mW
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9014 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER z Complementary to S9015 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current -Continuous 0.1 A C P Collector Power Dissipation 0.2 W C T Junction Temperature 150 j T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I = 100A, I=0 50 V (BR)CBO C E Collector-emitter breakdown voltage V I = 0.1mA, I=0 45 V (BR)CEO C B Emitter-base breakdown voltage V I =100A, I=0 5 V (BR)EBO E C Collector cut-off current I V =50 V , I=0 0.1 A CBO CB E Collector cut-off current I V =35V , I=0 0.1 A CEO CE B Emitter cut-off current I V = 3V , I=0 0.1 A EBO EB C DC current gain h V =5V, I = 1mA 200 1000 FE CE C Collector-emitter saturation voltage V (sat) I =100 mA, I = 5mA 0.3 V CE C B Base-emitter saturation voltage V (sat) I =100 mA, I = 5mA 1 V BE C B V =5V, I = 10mA CE C Transition frequency f 150 MHz T f=30MHz CLASSIFICATION OF h FE Rank L H Range 200-450 450-1000 B,Dec,2011Typical Characterisitics S9014 h Static Charact eristic I FE C 8 1000 COMMON T =100 EMITTER a T =25 a 20uA 6 18uA T =25 a 16uA 14uA 4 100 12uA 10uA 8uA 2 6uA 4uA COMMON EMITTER I =2uA V = 5V B CE 0 10 024 68 0.1 1 10 100 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I CEsat C BEsat C 1 2 1 T =25 a 0.1 T =100 T =100 a a T =25 a =20 =20 0.01 0.1 0.1 1 10 100 0.1 1 10 100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V f I C BE T C 100 1000 T =100 a 10 100 T =25 a 1 10 COMMON EMITTER V =5V COMMON EMITTER CE V = 5V T =25 CE a 0.1 1 0.0 0.3 0.6 0.9 1.2 0.1 1 10 100 BASE-EMMITER VOLTAGE V (V) COLLECTOR CURRENT I (mA) BE C C / C V / V P T ob ib CB EB C a 100 250 f=1MHz I =0/I =0 E C T =25 a 200 C ib 10 150 C ob 100 1 50 0.1 0 0.1 1 10 20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) R a B,Dec,2011 COLLECTOR-EMITTER SATURATION VOLTAGE V (V) CEsat COLLECTOR CURRENT I (mA) CAPACITANCE C (pF) C COLLECTOR CURRENT I (mA) C COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION P (mW) VOLTAGE V (V) C TRANSITION FREQUENCY f (MHz) DC CURRENT GAIN h T BEsat FE

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Changjiang may also be referenced as

CJT(Changjiang Connectors)
Changjiang Connectors
Changjiang Electronics Tech (CJ)
CJT(Changjiang Connectors)