Product Information

MMSTA92

Product Image X-ON

Datasheet
Transistors (NPN/PNP) PNP 200mA 305V SOT-323 (SC-70) RoHS
Manufacturer: Changjiang



Price (Ex GST)

From 0.0722

540 - Global Stock
Ships to you between
Fri. 06 Aug to Thu. 12 Aug
MOQ: 10 Multiples:10
Pack Size :   10
Availability Price Quantity
210 - Global Stock


Ships to you between Fri. 06 Aug to Thu. 12 Aug

MOQ : 10
Multiples : 10

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MMSTA92
Changjiang

10 : $ 0.6455
100 : $ 0.4915
300 : $ 0.4632
1000 : $ 0.4349
5000 : $ 0.4223
10000 : $ 0.4161

     
Manufacturer
Changjiang
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
Sot-323(Sc-70)
Brand Category
Changjiang
Transistor Type
Pnp
Current - Collector Ic Max
200 mA
Voltage - Collector Emitter Breakdown Max
305 V
Power - Max
200 mW
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors JC ( T MMSTA92 TRANSISTOR (PNP) SOT 323 FEATURES Small Surface Mount Package Complementary to MMSTA42 Ideal for Medium Power Amplification and Switching MARKING:K3R 1. BASE MAXIMUM RATINGS (T =25 unless otherwise noted) a 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -310 V CBO Collector-Emitter Voltage -305 V V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -200 mA C Collector Current -Pulsed -50 0 mA I C M P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 /W JA Junction Temperature 150 T j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit V I =-100A, I =0 -310 V Collector-base breakdown voltage (BR)CBO C E Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -305 V Emitter-base breakdown voltage V I =-100A, I =0 -5 V (BR)EBO E C Collector cut-off current I V =-200V, I =0 -250 nA CBO CB E V =-200V, I =0 -250 nA CE B Collector cut-off current I CEO V =-300V, I =0 -5 A CE B Emitter cut-off current I V =-5V, I =0 -100 nA EBO EB C V =-10V, I =-1mA 60 CE C DC current gain h V =-10V, I =-10mA 100 200 FE CE C V =-10V, I =-30mA 60 CE C V I =-20mA, I =-2mA -0.2 V Collector-emitter saturation voltage CE(sat) C B Base-emitter saturation voltage V I =-20mA, I =-2mA -0.9 V BE(sat) C B Transition frequency f V =-20V,I =-10mA , f=30MHz 50 MHz T CE E Collector output capacitance C V =-20V, I =0, f=1MHz 6 pF ob CB E www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014C,Sep,2014 Typical Characteristics h I Static Characteristic FE C -20 1000 COMMON EMITTER T =25 a -100uA -15 o -90uA T =100 C a -80uA -70uA o -10 100 T =25 C a -60uA -50uA -40uA -5 -30uA -20uA V = -10V CE I =-10uA B -0 10 -0 -2 -4 -6 -8 -10 -12 -14 -10 -100 -200 COLLECTOR CURRENT I (mA) C COLLECTOR-EMITTER VOLTAGE V (V) CE V I V I CEsat C BEsat C -1000 -400 =10 -800 -300 T =25 a -600 -200 T =100 a T =100 a -400 -100 T =25 a =10 -200 -0 -1 -10 -100 -200 -1 -10 -100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB -200 1000 f=1MHz I =0 / I =0 E C o T =25 C a -150 100 C ib o T =100 C -100 a T =25 a 10 C -50 ob V =-10V CE -0 1 -200 -400 -600 -800 -1000 -0.1 -1 -10 -20 REVERSE VOLTAGE V (V) BASE-EMITTER VOLTAGE V (mV) BE f I P T T C c a 100 0.4 V =-20V CE o T =25 C a 80 0.3 60 0.2 40 0.1 20 0 0.0 -0 -20 -40 -60 -80 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a COLLECTOR CURRENT I (mA) C www.cj-elec.comwww.cj-elec.com 2 A,Jun,2014C,Sep,2014 COLLECTOR CURRENT I (mA) C BASE-EMITTER SATURATION COLLECTOR CURRENT I (mA) TRANSITION FREQUENCY f (MHz) C T VOLTAGE V (mV) BEsat COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) DC CURRENT GAIN h P (W) CEsat FE CAPACITANCE C (pF) c

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Changjiang may also be referenced as

CJT(Changjiang Connectors)
Changjiang Connectors
Changjiang Electronics Tech (CJ)
CJT(Changjiang Connectors)