Product Information

MMST5401

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Datasheet
Transistors (NPN/PNP) PNP 600mA 150V SOT-323 (SC-70) RoHS
Manufacturer: Changjiang



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From 0.0395

9240 - Global Stock
Ships to you between
Tue. 22 Jun to Mon. 28 Jun

MOQ: 20 Multiples:20
Pack Size :   20
Availability Price Quantity
9240 - Global Stock


Ships to you between Tue. 22 Jun to Mon. 28 Jun

MOQ : 20
Multiples : 20

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MMST5401
Changjiang

20 : $ 0.061
200 : $ 0.0466
600 : $ 0.0438
2000 : $ 0.0412
10000 : $ 0.0401
20000 : $ 0.0395

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Manufacturer
Changjiang
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
Sot-323(Sc-70)
Brand Category
Changjiang
Transistor Type
Pnp
Current - Collector Ic Max
600 mA
Voltage - Collector Emitter Breakdown Max
150 V
Power - Max
200 mW
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Mfr. Part No.
Description
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600
Zener Diodes SOD-123 RoHS
3100
Image
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Description
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors JC ( T MMST5401 TRANSISTOR (PNP) SOT 323 FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (T =25 unless otherwise noted) a 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage -160 V V CBO V Collector-Emitter Voltage -150 V CEO V Emitter-Base Voltage -5 V EBO Collector Current -600 mA IC P Collector Power Dissipation 200 mW C Thermal Resistance From Junction To Ambient 625 R /W JA T Junction Temperature 150 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100A, I =0 -160 V (BR)CBO C E Collector-emitter breakdown voltage V I =-1mA, I =0 -150 V (BR)CEO C B V I =-10A, I =0 -5 V Emitter-base breakdown voltage (BR)EBO E C Collector cut-off current I V =-120V, I =0 -50 nA CBO CB E Emitter cut-off current I V =-3V, I =0 -50 nA EBO EB C V =-5V, I =-1mA 50 CE C DC current gain h V =-5V, I =-10mA 60 300 FE CE C V =-5V, I =-50mA 50 CE C I =-50mA, I =-5mA -0.5 V C B Collector-emitter saturation voltage V CE(sat) I =-10mA, I =-1mA -0.2 V C B I =-50mA, I =-5mA -1 V C B Base-emitter saturation voltage V BE(sat) I =-10mA, I =-1mA -1 V C B f V =-10V,I =-10mA , f=100MHz 100 MHz Transition frequency T CE C C V =-10V, I =0, f=1MHz 6 pF Collector output capacitance ob CB E www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014C,Oct,2015Typical Characteristics h Static Characteristic I FE C -20 400 COMMON EMITTER COMMON EMITTER -18 T =25 V =-5V CE a 350 -0.1mA -16 -0.09mA 300 -14 -0.08mA 250 T =100 -12 a -0.07mA -10 -0.06mA 200 -0.05mA -8 150 -0.04mA T =25 -6 a 100 -0.03mA -4 -0.02mA 50 -2 I =-0.01mA B -0 0 -0 -1 -2 -3 -4 -5 -6 -7 -8 -1 -10 -100 -200 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V V I I CEsat BEsat C C -1000 -10 =10 =10 -800 -1 T =25 a -600 T =100 a T =100 a -0.1 -400 T =25 a -200 -0.01 -1 -10 -100 -200 -1 -10 -100 -200 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V f I C BE T C 1000 -200 COMMON EMITTER COMMON EMITTER -100 V =-5V CE V = -10V CE T =25 a 100 -10 T =100 a T =25 a 10 -1 -0.1 1 -200 -400 -600 -800 -1000 -1200 -1 -10 -70 BASE-EMMITER VOLTAGE V (mV) COLLECTOR CURRENT I (mA) BE C C / C V / V P T ob ib CB EB C a 100 250 f=1MHz I =0/I =0 E C T =25 a 200 C ib 150 10 C ob 100 50 1 0 -35 -0.1 -1 -10 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) a www.cj-elec.comwww.cj-elec.com 2 A,Jun,2014C,Oct,2015 BASE-EMITTER SATURATION COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C VOLTAGE V (mV) CAPACITANCE C (pF) C BEsat COLLECTOR POWER DISSIPATION COLLECTOR-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) DC CURRENT GAIN h P (mW) T VOLTAGE V (V) FE C CEsat

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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