Product Information

MMST3904

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Datasheet
Transistors (NPN/PNP) NPN 200mA 40V SOT-323 (SC-70) RoHS
Manufacturer: Changjiang



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From 0.0353

7180 - Global Stock
Ships to you between
Tue. 22 Jun to Mon. 28 Jun

MOQ: 20 Multiples:20
Pack Size :   20
Availability Price Quantity
4160 - Global Stock


Ships to you between Tue. 22 Jun to Mon. 28 Jun

MOQ : 20
Multiples : 20

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MMST3904
Changjiang

20 : $ 0.0511
200 : $ 0.0405
600 : $ 0.0385
2000 : $ 0.0365
10000 : $ 0.0357
20000 : $ 0.0353

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Manufacturer
Changjiang
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
Sot-323(Sc-70)
Brand Category
Changjiang
Transistor Type
Npn
Current - Collector Ic Max
200 mA
Voltage - Collector Emitter Breakdown Max
40 V
Power - Max
200 mW
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors JC ( T MMST3904 TRANSISTOR (NPN) SOT 323 FEATURES Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Value Unit Symbol 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER V Collector-Emitter Voltage 40 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO Collector Current 200 mA I C P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 /W JA T Junction Temperature 150 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit V * I =10A, I =0 60 V Collector-base breakdown voltage (BR)CBO C E V * I =1mA, I =0 40 V Collector-emitter breakdown voltage (BR)CEO C B V * I =10A, I =0 5 V Emitter-base breakdown voltage (BR)EBO E C Collector cut-off current ICBO* VCB=60V, IE=0 60 nA Collector cut-off current I * V =40V, I =0 500 nA CEO CE B Collector cut-off current I V =30V, VBE(off)=3V 50 nA CEX CE V =1V, I =100A 40 CE C V =1V, I =1mA 70 CE C h * DC current gain FE V =1V, I =10mA 100 300 CE C V =1V, I =50mA 60 CE C I =10mA, I =1mA 0.25 V C B Collector-emitter saturation voltage V * CE(sat) I =50mA, I =5mA 0.3 V C B I =10mA, I =1mA 0.85 V C B Base-emitter saturation voltage V * BE(sat) I =50mA, I =5mA 0.95 V C B Transition frequency f V =20V,I =10mA , f=100MHz 300 MHz T CE C Collector output capacitance C V =5V, I =0, f=1MHz 4 pF ob CB E Collector output capacitance C V =0.5V, I =0, f=1MHz 8 pF ib EB E Delay time t V =3V, V =0.5V I =10mA, 35 ns d CC BE(off) C I =1mA Rise time t B1 35 ns r Storage time t 225 ns s V =3V, I =10mA, I = I =1mA CC C B1 B2 Fall time t 75 ns f *Pulse test: pulse width 300s,duty cycle 2.0%. www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014C,Sep,2014Typical Characteristics h I Static Characteristic FE C 20 300 V = 1V CE 100uA COMMON o EMITTER 250 T =100 C 90uA a T =25 a 15 80uA 200 70uA 60uA 10 150 50uA 40uA o T =25 C a 100 30uA 5 20uA 50 I =10uA B 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1 10 100 200 COLLECTOR CURRENT I (mA) C COLLECTOR-EMITTER VOLTAGE V (V) CE V I V I CEsat C BEsat C 1.0 400 =10 =10 0.8 300 T =25 a 0.6 200 T =100 a T =100 a 0.4 100 T =25 a 0.2 0 0.1 1 10 100 200 110 100 200 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C P T I V c a C BE 250 200 100 200 o T =100 C a 10 150 T =25 a 100 1 50 V =1V CE 0.1 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a BASE-EMITTER VOLTAGE V (V) BE www.cj-elec.comwww.cj-elec.com 2 C,Sep,2014A,Jun,2014 COLLECTOR CURRENT I (mA) C BASE-EMITTER SATURATION COLLECTOR CURRENT I (mA) C VOLTAGE V (V) BEsat COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) P (mW) CEsat DC CURRENT GAIN h c FE

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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