Product Information

MMBT3904

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Datasheet
Transistors (NPN/PNP) NPN 200mA 40V SOT-23 (SOT-23-3) RoHS
Manufacturer: Changjiang



Price (Ex GST)

From 0.0191

496900 - Global Stock
Ships to you between
Fri. 06 Aug to Thu. 12 Aug
MOQ: 50 Multiples:50
Pack Size :   50
Availability Price Quantity
226350 - Global Stock


Ships to you between Fri. 06 Aug to Thu. 12 Aug

MOQ : 50
Multiples : 50

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MMBT3904
Changjiang

50 : $ 0.1805
500 : $ 0.1316
1500 : $ 0.1226
5000 : $ 0.1136
25000 : $ 0.1096
50000 : $ 0.1076

     
Manufacturer
Changjiang
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
SOT-23 (SOT-23-3)
Brand Category
Changjiang
Transistor Type
Npn
Current - Collector Ic Max
200 mA
Voltage - Collector Emitter Breakdown Max
40 V
Power - Max
200 mW
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT23 FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER Collector-Emitter Voltage 40 V V CEO 3. COLLECTOR V Emitter-Base Voltage 6 V EBO I Collector Current 200 mA C P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 /W JA Junction Temperature 150 T j T Storage Temperature -55+150 stg T Operating Temperature 0+70 OPR ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =10A, I=0 60 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I=0 40 V (BR)CEO C B V I =10A, I=0 6 V Emitter-base breakdown voltage (BR)EBO E C I V =30V, V=3V 50 nA Collector cut-off current CEX CE EB(off) Collector cut-off current I V = 60V, I=0 100 nA CBO CB E Emitter cut-off current I V =5V, I=0 100 nA EBO EB C h V =1V, I=10mA 100 300 FE(1) CE C DC current gain h V =1V, I=50mA 60 FE(2) CE C h V =1V, I=100mA 30 FE(3) CE C Collector-emitter saturation voltage V I =50mA, I=5mA 0.3 V CE(sat) C B Base-emitter saturation voltage V I =50mA, I =5mA 0.95 V BE(sat) C B Transition frequency f V =20V,I =10mA, f=100MHz 300 MHz T CE C V =3V, V =-0.5V I =10mA, CC BE(off) C Delay time t 35 ns d I =1mA B1 V =3V, V =-0.5V I =10mA, CC BE(off) C Rise time t 35 ns r I =1mA B1 Storage time t V =3V, I =10mA, I = I=1mA 200 ns s CC C B1 B2 Fall time t V =3V, I =10mA, I = I =1mA 50 ns f CC C B1 B2 CLASSIFICATION OF h FE(1) HFE 100-300 RANK L H RANGE 100200 200300 C,Oct,2012Typical Characterisitics MMBT3904 h I Static Characteristic FE C 100 400 COMMON EMITTER COMMON V =1V EMITTER CE 500uA T =25 a 80 450uA T =100 a 300 400uA 350uA 60 300uA 200 T =25 250uA a 40 200uA 150uA 100 20 100uA I =50uA B 0 0 0.1 0.3 1 3 10 30 100 04 8 12 16 20 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I BEsat C CEsat C 1.2 600 300 T =25 a 0.8 T =100 a 100 T =100 a T =25 a 0.4 30 =10 =10 10 0.0 1 3 10 30 100 200 113 0 30100 300 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 9 100 COMMON EMITTER f=1MHz V =1V I =0/I =0 CE E C 30 T =25 a C ib T =100 a 10 3 3 C ob T =25 a 1 0.3 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.3 1 3 10 20 REVERSE VOLTAGE V (V) BASE-EMMITER VOLTAGE V (V) BE f I P T T C C a 300 250 V =20V CE T =25 a 200 200 150 100 50 100 0 113 0 30 60 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a C,Oct,2012 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) C COLLECTOR CURRENT I (mA) T C VOLTAGE V (mV) CEsat BASE-EMITTER SATURATION DC CURRENT GAIN h COLLECTOR POWER DISSIPATION FE CAPACITANCE C (pF) VOLTAGE V (V) P (mW) BEsat C

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Changjiang may also be referenced as

CJT(Changjiang Connectors)
Changjiang Connectors
Changjiang Electronics Tech (CJ)
CJT(Changjiang Connectors)