Product Information

2SB1188

Product Image X-ON

Datasheet
Transistors (NPN/PNP) PNP 2A 32V SOT-89 (SOT-89-3) RoHS
Manufacturer: Changjiang



Price (Ex GST)

From 0.1293

1115 - Global Stock
Ships to you between
Fri. 06 Aug to Thu. 12 Aug
MOQ: 5 Multiples:5
Pack Size :   5
Availability Price Quantity
1905 - Global Stock


Ships to you between Fri. 06 Aug to Thu. 12 Aug

MOQ : 5000
Multiples : 5

Stock Image

2SB1188
Changjiang

5000 : $ 0.8046
5 : $ 1.1457
50 : $ 0.9166
150 : $ 0.8746
500 : $ 0.8325
2500 : $ 0.8138

705 - Global Stock


Ships to you between Fri. 06 Aug to Thu. 12 Aug

MOQ : 5000
Multiples : 5

Stock Image

2SB1188
Changjiang

5000 : $ 0.6828
5 : $ 1.0345
50 : $ 0.7983
150 : $ 0.755
500 : $ 0.7116
2500 : $ 0.6923

     
Manufacturer
Changjiang
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
SOT-89 (SOT-89-3)
Brand Category
Changjiang
Transistor Type
Pnp
Current - Collector Ic Max
2 A
Voltage - Collector Emitter Breakdown Max
32 V
Power - Max
500 mW
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
Stock Image 2SB647
Transistors (NPN/PNP) PNP 1A 80V TO-92MOD RoHS
Stock : 0
Stock Image 2SB1260
Transistors (NPN/PNP) PNP 1A 80V SOT-89 (SOT-89-3) RoHS
Stock : 0
Stock Image 2SB1189
Transistors (NPN/PNP) PNP 700mA 80V SOT-89 (SOT-89-3) RoHS
Stock : 1235
Stock Image 2SB1424
Transistors (NPN/PNP) PNP 3A 20V SOT-89 (SOT-89-3) RoHS
Stock : 0
Stock Image 2SB1440
Transistors (NPN/PNP) PNP 2A 50V SOT-89 (SOT-89-3) RoHS
Stock : 1025
Stock Image 2SB1386
Transistors (NPN/PNP) PNP 5A 20V SOT-89 (SOT-89-3) RoHS
Stock : 475
Stock Image 2SB649A
Transistors (NPN/PNP) PNP 1.5A 160V TO-126 RoHS
Stock : 0
Stock Image 2SB649
Transistors (NPN/PNP) PNP 1.5A 120V TO-126 RoHS
Stock : 0
Stock Image 2SB1261-Z
Transistors (NPN/PNP) PNP 3A 60V TO-251 (I-PAK) RoHS
Stock : 2
Stock Image 2SB1440 (170-340)
Transistors (NPN/PNP) SOT-89-3L RoHS
Stock : 920
Image Description
Stock Image 2SD1766
Transistors (NPN/PNP) NPN 2A 32V SOT-89 (SOT-89-3) RoHS
Stock : 570
Stock Image 2SB1073
Transistors (NPN/PNP) PNP 4A 20V SOT-89 (SOT-89-3) RoHS
Stock : 0
Stock Image MMBT589
Transistors (NPN/PNP) PNP 1A 30V SOT-23 (SOT-23-3) RoHS
Stock : 5890
Stock Image 2SC1815L-GR-T92-B
Transistors (NPN/PNP) NPN 150mA 50V TO-92_Forming1 RoHS
Stock : 0
Stock Image 2SA940
Transistors (NPN/PNP) PNP 1.5A 150V TO-220 (TO-220-3) RoHS
Stock : 0
Stock Image S9018
Transistors (NPN/PNP) NPN 50mA 18V TO-92 (TO-92-3) RoHS
Stock : 27500
Stock Image PXT8050
Transistors (NPN/PNP) NPN 1.5A 25V SOT-89 (SOT-89-3) RoHS
Stock : 18210
Stock Image D882M
Transistors (NPN/PNP) NPN 3A 30V TO-252-2 (DPAK) RoHS
Stock : 13921
Stock Image MJE13001L-E-T92-K
Transistors (NPN/PNP) NPN 200mA 400V TO-92 (TO-92-3) RoHS
Stock : 0
Stock Image 2SB1185
Transistors (NPN/PNP) PNP 3A 50V TO-220 (TO-220-3) RoHS
Stock : 0

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR (PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR 1 z Low VCE(sat). 2 z Complements the 2SD1766 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V -40 V CBO Collector-Base Voltage V -32 V CEO Collector-Emitter Voltage V -5 V EBO Emitter-Base Voltage Collector Current -Continuous I -2 A C Collector Power Dissipation P 500 C mW Junction Temperature T 150 J Storage Temperature T -55~150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V -40 V (BR)CBO I =-50A , I =0 C E Collector-emitter breakdown voltage V I = -1mA , I=0 -32 V (BR)CEO C B Emitter-base breakdown voltage V -5 V (BR)EBO I =-50A, I =0 E C Collector cut-off current I V =-20 V , I=0 -1 A CBO CB E Emitter cut-off current I V =-4 V , I=0 -1 EBO EB C A h DC current gain * FE V =-3V, I = -0.5A 82 390 CE C Collector-emitter saturation voltage * V I =-2A, I = -0.2A -0.8 V CE(sat) C B Transition frequency f V =-5V, I =-0.5A ,f=30MHz 100 MHz T CE C Output capacitance V =-10V, I =0 ,f=1MHz 50 pF C CB E ob * Measured using pulse current. CLASSIFICATION OF h FE Rank P Q R Range 82-180 120-270 180-390 Marking BCP BCQ BCR B,Mar,2012Typical Characteristics 2SB1188 h I Static Characteristic FE C -0.7 1000 COMMON EMITTER T =25 a -0.6 -2.0mA T =100 a -1.8mA -0.5 -1.6mA T =25 a -0.4 -1.4mA 100 -1.2mA -0.3 -1.0mA -0.8mA -0.2 -0.6mA -0.4mA -0.1 COMMON EMITTER I =-0.2mA B V = -3V CE -0.0 10 -5 -0 -1 -2 -3 -4 -5 -6 -10 -100 -1000 -2000 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V V I I CEsat BEsat C C -1000 -2000 -1000 T =25 -100 a T =100 a T =100 a -10 T =25 a =10 =10 -1 -100 -1 -10 -100 -1000 -2000 -0.1 -1 -10 -100 -1000 -2000 COLLECTOR CURREMT I (mA) COLLECTOR CURREMT I (mA) C C C /C V /V I V ob ib CB EB C BE -2000 300 f=1MHz -1000 I =0/I =0 C E C ib T =25 a 100 -100 C ob -10 10 -1 COMMON EMITTER V = -3V CE -0.1 1 -0.1 -1 -10 -20 -0 -200 -400 -600 -800 -1000 -1200 BASE-EMMITER VOLTAGE V (mV) REVERSE VOLTAGE V (V) BE P T C a 600 500 400 300 200 100 0 B,Mar,2012 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) P (mW) COLLECTOR CURRENT I (mA) CEsat C COLLECTOR CURRENT I (A) C C BASE-EMITTER SATURATION VOLTAGE V (mV) DC CURRENT GAIN h CAPACITANCE C (pF) BEsat FE

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Changjiang may also be referenced as

CJT(Changjiang Connectors)
Changjiang Connectors
Changjiang Electronics Tech (CJ)
CJT(Changjiang Connectors)