Product Information

CMPTA92E TR

CMPTA92E TR electronic component of Central Semiconductor

Datasheet
Bipolar Transistors - BJT PNP Enh FET 500mA 350Vcbo 350Vceo

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6277 ea
Line Total: USD 0.63

29092 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
26992 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

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CMPTA92E TR
Central Semiconductor

1 : USD 0.3599
10 : USD 0.3163
100 : USD 0.2519
500 : USD 0.2208
1000 : USD 0.1966
3000 : USD 0.1817
9000 : USD 0.1817
24000 : USD 0.1794

     
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RoHS - XON
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Cnhts
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Mxhts
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CMPTA42E NPN CMPTA92E PNP ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPTA42E and HIGH VOLTAGE CMPTA92E are Enhanced versions of the CMPTA42 SILICON TRANSISTORS and CMPTA92 complementary surface mount high voltage transistors. MARKING CODES: CMPTA42E: C1DE CMPTA92E: C2DE FEATURED ENHANCED SPECIFICATIONS: BV from 300V min to 350V min. CBO SOT-23 CASE BV from 300V min to 350V min. CEO h from 25 min to 50 min. FE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 350 V CBO Collector-Emitter Voltage V 350 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A TYP SYMBOL TEST CONDITIONS MIN CMPTA42E CMPTA92E MAX UNITS I V=200V 250 nA CBO CB I V=3.0V 100 nA EBO EB BV I=100A 350 590 500 V CBO C BV I=1.0mA 350 475 450 V CEO C BV I=100A 6.0 8.7 9.6 V EBO E V I =50mA, I=5.0mA 125 150 350 mV CE(SAT) C B V I =20mA, I=2.0mA 0.9 V BE(SAT) C B h V =10V, I=1.0mA 50 110 105 FE CE C h V =10V, I=10mA 50 110 105 FE CE C h V =10V, I=30mA 50 110 105 FE CE C f V =20V, I =10mA, f=100MHz 50 75 75 MHz T CE C C V =20V, I =0, f=1.0MHz 6.0 pF ob CB E Enhanced specification R3 (3-February 2010)CMPTA42E NPN CMPTA92E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPTA42E: C1DE CMPTA92E: C2DE R3 (3-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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