Product Information

CMPTA46 TR

CMPTA46 TR electronic component of Central Semiconductor

Datasheet
Central Semiconductor Bipolar Transistors - BJT NPN Extremely High Voltage

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7182 ea
Line Total: USD 0.72

23561 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16459 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

CMPTA46 TR
Central Semiconductor

1 : USD 0.6118
10 : USD 0.5428
100 : USD 0.3852
500 : USD 0.3301
1000 : USD 0.2852
3000 : USD 0.2611
6000 : USD 0.2473
9000 : USD 0.2461
24000 : USD 0.2427

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CMPTA46 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA46 type is a surface mount epoxy molded NPN silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C46 SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 450 V CBO Collector-Emitter Voltage V 450 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=400V 100 nA CBO CB I V=4.0V 100 nA EBO BE BV I=100A 450 610 V CBO C BV I=1.0mA 450 490 V CEO C BV I=10A 6.0 8.7 V EBO E V I =1.0mA, I=0.1mA 0.20 V CE(SAT) C B V I =10mA, I=1.0mA 0.30 V CE(SAT) C B V I =50mA, I=5.0mA 0.15 0.50 V CE(SAT) C B V I =10mA, I=1.0mA 1.0 V BE(SAT) C B h V =10V, I=1.0mA 40 108 FE CE C h V =10V, I=10mA 50 110 200 FE CE C h V =10V, I=50mA 45 95 FE CE C h V =10V, I=100mA 25 35 FE CE C f V =10V, I =10mA, f=10MHz 20 MHz T CE C C V =20V, I =0, f=1.0MHz 7.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 130 pF ib EB C R5 (3-February 2010)CMPTA46 SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C46 R5 (3-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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