Product Information

CMPT3906TR

CMPT3906TR electronic component of Central Semiconductor

Datasheet
Transistors Bipolar - BJT PNP Gen Purpose

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 3000
Multiples : 3000

Stock Image

CMPT3906TR
Central Semiconductor

3000 : USD 0.3266
6000 : USD 0.3041
15000 : USD 0.3003
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

CMPT3906TR
Central Semiconductor

1 : USD 0.9327
10 : USD 0.8125
25 : USD 0.7192
100 : USD 0.6264
250 : USD 0.5453
500 : USD 0.464
1000 : USD 0.3712
N/A

Obsolete
0 - Global Stock

MOQ : 3000
Multiples : 1

Stock Image

CMPT3906TR
Central Semiconductor

3000 : USD 0.0455
6000 : USD 0.041
15000 : USD 0.0374
N/A

Obsolete
0 - Global Stock

MOQ : 3000
Multiples : 1

Stock Image

CMPT3906TR
Central Semiconductor

3000 : USD 0.0455
6000 : USD 0.041
15000 : USD 0.0374
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

CMPT3906TR
Central Semiconductor

1 : USD 1.08
10 : USD 0.8748
100 : USD 0.2387
500 : USD 0.1793
1000 : USD 0.1339
3000 : USD 0.1145
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CMPT3904 CMPT3904G* NPN CMPT3906 CMPT3906G* PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY These CENTRAL SEMICONDUCTOR devices are SILICON TRANSISTORS complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMPT3904: C1A CMPT3906: C2A CMPT3904G*: CG1 SOT-23 CASE CMPT3906G*: CG2 Device is Halogen Free by design * CMPT3904 CMPT3906 MAXIMUM RATINGS: (T =25C) SYMBOL CMPT3904G* CMPT3906G* UNITS A Collector-Base Voltage V 60 40 V CBO Collector-Emitter Voltage V 40 40 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA CMPT3904 CMPT3906 ELECTRICAL CHARACTERISTICS: (T =25C) CMPT3904G* CMPT3906G* A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=3.0V - 50 - 50 nA CEV CE EB I V =30V, V=3.0V - 50 - 50 nA BL CE EB BV I=10A 60 - 40 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=10A 6.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.20 - 0.25 V CE(SAT) C B V I =50mA, I=5.0mA - 0.30 - 0.40 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 40 - 60 - FE CE C h V =1.0V, I=1.0mA 70 - 80 - FE CE C h V =1.0V, I=10mA 100 300 100 300 FE CE C h V =1.0V, I=50mA 60 - 60 - FE CE C h V =1.0V, I=100mA 30 - 30 - FE CE C R7 (1-February 2010)CMPT3904 CMPT3904G* NPN CMPT3906 CMPT3906G* PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS CMPT3904 CMPT3906 ELECTRICAL CHARACTERISTICS - Continued: (T =25C) CMPT3904G* CMPT3906G* A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS f V =20V, I =10mA, f=100MHz 300 - 250 - MHz T CE C C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 8.0 - 10 pF ib BE C h V =10V, I =1.0mA, f=1.0kHz 1.0 10 2.0 12 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 0.5 8.0 0.1 10 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 1.0 40 3.0 60 S oe CE C NF V =5.0V, I =100A, R =1.0k, CE C S f=10Hz to 15.7kHz - 5.0 - 4.0 dB t V =3.0V, V =0.5, I =10mA, I=1.0mA - 35 - 35 ns d CC BE C B1 t V =3.0V, V =0.5, I =10mA, I=1.0mA - 35 - 35 ns r CC BE C B1 t V =3.0V, I =10mA, I =I=1.0mA - 200 - 225 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA - 50 - 75 ns f CC C B1 B2 SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: MARKING CODES: 1) Base CMPT3904: C1A 2) Emitter CMPT3906: C2A 3) Collector CMPT3904G*: CG1 CMPT3906G*: CG2 Device is Halogen Free by design * R7 (1-February 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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