Product Information

CMPD914E TR

CMPD914E TR electronic component of Central Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching Enhanced Spec High Speed

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5678 ea
Line Total: USD 0.57

15318 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10382 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

CMPD914E TR
Central Semiconductor

1 : USD 0.3979
10 : USD 0.2806
100 : USD 0.1116
1000 : USD 0.0886
3000 : USD 0.0713
9000 : USD 0.0644
24000 : USD 0.0587
45000 : USD 0.0563
99000 : USD 0.0552

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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CMPD914E ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION: HIGH SPEED The CENTRAL SEMICONDUCTOR CMPD914E is SILICON SWITCHING DIODE an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications. MARKING CODE: C5DE FEATURED ENHANCED SPECIFICATIONS: BV from 100V min to 120V min. (150V TYP) R SOT-23 CASE V from 1.0V max to 0.85V max. (0.72V TYP) F MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 75 V R Peak Repetitive Reverse Voltage V 120 V RRM Continuous Forward Current I 250 mA F Peak Repetitive Forward Current I 250 mA FRM Peak Forward Surge Current, tp=1.0s I 4000 mA FSM Peak Forward Surge Current, tp=1.0ms I 2000 mA FSM Peak Forward Surge Current, tp=1.0s I 1000 mA FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=20V 25 nA R R I V=75V 5.0 A R R BV I=100A 120 150 V R R V I=10mA 0.720 0.850 V F F V I=100mA 0.915 0.970 V F F C V =0, f=1.0MHz 2.0 pF T R t I =I =10mA, R =100, Rec. to 1.0 mA 4.0 ns rr R F L Enhanced specification. Additional Enhanced specification. R3 (25-January 2010)CMPD914E ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode 2) No Connection 3) Cathode MARKING CODE: C5DE R3 (25-January 2010) www.centralsemi.com

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Central
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.

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