Product Information

2N6027 PBFREE

2N6027 PBFREE electronic component of Central Semiconductor

Datasheet
Bipolar Transistors - BJT Prog Uni-Junction

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.047 ea
Line Total: USD 2.047

51431 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
49598 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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2N6027 PBFREE
Central Semiconductor

1 : USD 2.047
10 : USD 1.794
100 : USD 1.5525
250 : USD 1.472
500 : USD 1.3915
1000 : USD 1.3455
2500 : USD 1.196

     
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Rated Repetitive Off-State Voltage Vdrm
Brand
Gate Trigger Current - Igt
Maximum Gate Peak Inverse Voltage
Non Repetitive On-State Current
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2N6027 2N6028 www.centralsemi.com SILICON DESCRIPTION: PROGRAMMABLE The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 UNIJUNCTION TRANSISTORS devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (I ), Peak Current (I ), and Intrinsic V P Standoff Ratio (). MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Gate-Cathode Forward Voltage V 40 V GKF Gate-Cathode Reverse Voltage V 5.0 V GKR Gate-Anode Reverse Voltage V 40 V GAR Anode-Cathode Voltage V 40 V AK Peak Non-Repetitive Forward Current (t=10s) I 5.0 A TSM Peak Repetitive Forward Current (t=20s, D.C.=1.0%) I 2.0 A TRM Peak Repetitive Forward Current (t=100s, D.C.=1.0%) I 1.0 A TRM DC Forward Anode Current I 150 mA T DC Gate Current I 50 mA G Power Dissipation P 300 mW D Operating Junction Temperature T -50 to +100 C J Storage Temperature T -55 to +150 C stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N6027 2N6028 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=40V - 10 - 10 nA GAO S I V=40V - 50 - 50 nA GKS S I V =10V, R =1.0M - 2.0 - 0.15 A P S G I V =10V, R =10k - 5.0 - 1.0 A P S G I V =10V, R =1.0M - 50 - 25 A V S G I V =10V, R =10k 70 - 25 - A V S G I V =10V, R =200 1.5 - 1.0 - mA V S G V V =10V, R =1.0M 0.2 1.6 0.2 0.6 V T S G V V =10V, R =10k 0.2 0.6 0.2 0.6 V T S G V I=50mA - 1.5 - 1.5 V F F V V =20V, C=0.2F 6.0 - 6.0 - V O B C t V =20V, C=0.2F - 80 - 80 ns r B C R2 (4-February 2014)2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Anode 2) Gate 3) Cathode MARKING: FULL PART NUMBER R2 (4-February 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Central Semiconductor Corp
Central Semiconductor Corp.

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