The B1D20120H is a Schottky Barrier Diode (SBD) manufactured by BASiC Semiconductor. It is in a TO-247-2L RoHS package and features a low forward voltage drop, high frequency switching, and low reverse leakage current. This SBD also provides a low junction capacitance ideal for use in high speed switching circuits. The device is rated for a maximum total power dissipation of 850 mW and can withstand operating temperatures up to 175°C. This part is RoHS compliant and is designed for use in a variety of applications such as rectifiers, voltage multipliers, freewheel and protection diodes.