HMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 Features Typical Applications The HmC617lp 3(e) is ideal for: Noise f igure: 0.5 dB Cellular/3G and l Te /w imAX/4G Gain: 16 dB BTs & infrastructure o utput ip 3: +37 dBm r epeaters and f emtocells s ingle s upply: +3V to +5V public s afety r adio 50 o hm matched input/o utput Access points 2 16 l ead 3x3mm Qf N package: 9 mm Functional Diagram General Description The HmC617lp 3(e) is a GaAs pHemT mmiC l ow Noise Amplifier that is ideal for Cellular/3G and l Te /w imAX/4G basestation front-end receivers operating between 550 and 1200 mHz. The amplifier has been optimized to provide 0.5 dB noise figure, 16 dB gain and +37 dBm output ip 3 from a single supply of +5V. input and output return losses are excellent and the l NA requires minimal external matching and bias decoupling components. The HmC617lp 3(e) shares the same package and pinout with the HmC618lp 3(e) 1.7 - 2.2 GHz l NA. The HmC617lp 3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the l NA for each application. The HmC617lp 3(e) offers improved noise figure versus the previously released HmC372lp 3(e) and the HmC376lp 3(e). Electrical Specifications, T = +25 C, Rbias = 3.92k Ohms* A Vdd = +3 Vdc Vdd = +5 Vdc parameter Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. f requency r ange 698 - 960 550 - 1200 698 - 960 550 - 1200 mHz Gain 13 16 11 15 13.5 16 11.5 16 dB Gain Variation o ver Temperature 0.003 0.003 0.005 0.005 dB/ C Noise f igure 0.5 0.8 0.5 1.1 0.55 0.85 0.6 1.1 dB input r eturn l oss 28 22 22 17 dB o utput r eturn l oss 12 14 12 15 dB o utput power for 1 dB 14 16 12.5 16 18.5 21 16.5 20 dBm Compression (p1dB) s aturated o utput power (psat) 17 16.5 21 20.5 dBm o utput Third o rder intercept (ip 3) 31 30 37 37 dBm s upply Current (idd) 30 45 30 45 88 115 88 115 mA * r bias resistor sets current, see application circuit herein For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 1 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE Amplifiers - l ow No ise - sm THMC617LP3 / 617LP3E v02.0610 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 0.55 - 1.2 GHz 7 1 2 1 Broadband Gain & Return Loss Gain vs. Temperature 25 22 20 S21 20 15 10 +25C 18 +85C 5 - 40C Vdd=5V Vdd=3V 0 16 -5 S22 -10 14 -15 S11 -20 12 -25 -30 10 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 FREQUENCY (GHz) FREQUENCY (GHz) 2 1 Gain vs. Temperature Input Return Loss vs. Temperature 22 0 20 -5 +25 C +25C 18 -10 +85 C +85C - 40 C - 40C 16 -15 14 -20 12 -25 10 -30 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) 1 1 Reverse Isolation vs. Temperature Output Return Loss vs. Temperature 0 0 -5 -5 +25 C -10 -10 +85 C -40 C -15 -15 +25 C -20 -20 +85 C - 40 C -25 -25 -30 -30 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) 1 Vdd = 5V, r bias = 3.92K 2 Vdd = 3V, r bias = 3.92K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 2 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE RETURN LOSS (dB) GAIN (dB) RESPONSE (dB) ISOLATION (dB) RETURN LOSS (dB) GAIN (dB) Amplifiers - l ow No ise - sm T