TH645

BLF645 Broadband power LDMOS transistor Rev. 2 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at T = 25 C in a common source test circuit. h Mode of operation f V P P G IMD DS L L(PEP) p D (MHz) (V) (W) (W) (dB) (%) (dBc) CW, class-AB 1300 32 100 - 18 56 - 2-tone, class-AB 1300 32 - 100 18 45 32 1.2 Features CW performance at 1300 MHz, a drain-source voltage V of 32 V and a quiescent DS drain current I = 0.9 A for total device: Dq Average output power = 100 W Power gain = 18 dB Drain efficiency = 56 % 2-tone performance at 1300 MHz, a drain-source voltage V of 32 V and a quiescent DS drain current I = 0.9 A for total device: Dq Peak envelope load power = 100 W Power gain = 18 dB Drain efficiency = 45 % Intermodulation distortion = 32 dBc Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)BLF645 Broadband power LDMOS transistor 1.3 Applications Communication transmitter applications in the HF to 1400 MHz frequency range Industrial applications in the HF to 1400 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 12 1 2drain 2 5 3gate 1 3 4gate2 5 3 4 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF645 - flanged balanced LDMOST ceramic package 2 SOT540A mounting holes 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +11 V GS I drain current - 32 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to case T = 80 C P = 100 W 0.67 K/W th(j-c) case L 1 R is measured under RF conditions. th(j-c) BLF645 2 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 1 September 2015 2 of 14