Product Information

BLM2425M7S60PY

BLM2425M7S60PY electronic component of Ampleon

Datasheet
BLM2425M7S60P/HSOP16F/REEL 13

Manufacturer: Ampleon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 72.1896 ea
Line Total: USD 7218.96

0 - Global Stock
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1
1 : USD 51.4698
10 : USD 46.071
25 : USD 42.7323

0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1
1 : USD 51.4698
10 : USD 46.071
25 : USD 42.7323

0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 100
Multiples : 100
100 : USD 41.3173

     
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BLM2425M7S60P LDMOS 2-stage power MMIC Rev. 5 13 September 2018 Product data sheet 1. Product profile 1.1 General description 60W dual path, 2-stage power MMIC transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLM2425M7S60P is designed for high power CW applications and is assembled in a high performance plastic package. Table 1. Application performance Per section unless otherwise specified. Test signal f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 2450 32 30 27.5 45 1.2 Features and benefits High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Biasing of individual stages is externally accessible On-chip matching for ease of use Designed for broadband operation (frequency 2400 MHz to 2500 MHz) For RoHS compliance see the product details on the Ampleon website 1.3 Applications Industrial, scientific and medical applications in the frequency range 2400 MHz to 2500 MHz.BLM2425M7S60P LDMOS 2-stage power MMIC 2. Pinning information 2.1 Pinning pin 1 index V 1 DS(A1) V 2 GS(A2) V 3 GS(A2) RF_IN_A 4 16 RF_OUT_ V DS(A2) V 5 GS(A1) V 6 GS(A1) n.c. 7 n.c. 8 V GS(B1) 9 V GS(B1) 10 RF_IN_B RF_OUT_ V 11 15 DS(B2) V 12 GS(B2) V 13 GS(B2) V 14 DS(B1) amp00795 Transparent top view The exposed backside of the package is the ground terminal of the device. Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description V 1 drain-source voltage of stage A1 DS(A1) V 2, 3 gate-source voltage of stage A2 GS(A2) RF_IN_A 4 RF input path A V 5, 6 gate-source voltage of stage A1 GS(A1) n.c. 7 not connected n.c. 8 not connected V 9, 10 gate-source voltage of stage B1 GS(B1) RF_IN_B 11 RF input path of B V 12, 13 gate-source voltage of stage B2 GS(B2) V 14 drain-source voltage of stage B1 DS(B1) RF_OUT_B/V 15 RF output path B / drain source voltage of stage B2 DS(B2) RF_OUT_A/V 16 RF output path A / drain source voltage of stage A2 DS(A2) GND flange RF ground BLM2425M7S60P All information provided in this document is subject to legal disclaimers. Ampleon Netherlands B.V. 2018. All rights reserved. Product data sheet Rev. 5 13 September 2018 2 of 13

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