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BLF6G15L-500H,112

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Trans MOSFET N-CH 100V 45A 5-Pin SOT-239A Blister T/R
Manufacturer: Ampleon



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BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 ? 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at V = 50 V; I = 1.3 A. DS Dq Mode of operation f P G ? IMD3 IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 ?24 - - [1] [2] DVB-T (8k OFDM) 1452 to 1492 65 16 19 - ?32 9 [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? Digital transmitter applications DVB at 1.5 GHz ? Industrial applications at 1.5 GHz BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 ? 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at V = 50 V; I = 1.3 A. DS Dq Mode of operation f P G ? IMD3 IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 ?24 - - [1] [2] DVB-T (8k OFDM) 1452 to 1492 65 16 19 - ?32 9 [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? Digital transmitter applications DVB at 1.5 GHz ? Industrial applications at 1.5 GHzBLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G15L-500H (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 BLF6G15LS-500H (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G15L-500H - flanged balanced LDMOST ceramic package; SOT539A 2 mounting holes; 4 leads BLF6G15LS-500H - earless flanged balanced LDMOST ceramic SOT539B package; 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage ?0.5 +13 V GS I drain current - 45 A D T storage temperature ?65 +150 ?C stg T junction temperature - 200 ?C j BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 ? 12 July 2013 2 of 13 BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 ? 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at V = 50 V; I = 1.3 A. DS Dq Mode of operation f P G ? IMD3 IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 ?24 - - [1] [2] DVB-T (8k OFDM) 1452 to 1492 65 16 19 - ?32 9 [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? Digital transmitter applications DVB at 1.5 GHz ? Industrial applications at 1.5 GHz BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 ? 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at V = 50 V; I = 1.3 A. DS Dq Mode of operation f P G ? IMD3 IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 ?24 - - [1] [2] DVB-T (8k OFDM) 1452 to 1492 65 16 19 - ?32 9 [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? Digital transmitter applications DVB at 1.5 GHz ? Industrial applications at 1.5 GHzBLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G15L-500H (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 BLF6G15LS-500H (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G15L-500H - flanged balanced LDMOST ceramic package; SOT539A 2 mounting holes; 4 leads BLF6G15LS-500H - earless flanged balanced LDMOST ceramic SOT539B package; 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage ?0.5 +13 V GS I drain current - 45 A D T storage temperature ?65 +150 ?C stg T junction temperature - 200 ?C j BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 ? 12 July 2013 2 of 13BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =85 ?C; P = 65 W 0.18 K/W th(j-case) case L 6. Characteristics Table 6. DC characteristics T = 25 ?C; per section unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V drain-source breakdown voltage V =0V; I = 2.7 mA 100 - - V (BR)DSS GS D V gate-source threshold voltage V = 10 V; I = 270 mA 1.4 1.8 2.4 V GS(th) DS D I drain leakage current V =0V; V=50V --2.8 ?A DSS GS DS I drain cut-off current V =V + 3.75 V; 38 42 - A DSX GS GS(th) V =10V DS I gate leakage current V =11V; V=0V --280nA GSS GS DS g forward transconductance V =10V; I = 270 mA 1.33 2.3 - S fs DS D R drain-source on-state resistance V =V + 3.75 V; -100193m? DS(on) GS GS(th) I =9.5A D Table 7. RF characteristics RF characteristics in NXP class-AB production circuit, in frequency range 1452 MHz to 1492 MHz; T = 25 ?C. case Symbol Parameter Conditions Min Typ Max Unit DVB-T (8k OFDM), class-AB V drain-source voltage - 50 - V DS I quiescent drain current - 1.3 - A Dq P average output power - 65 - W L(AV) G power gain 14.5 16 - dB p ? drain efficiency 16 19 - % D [1] IMD intermodulation distortion shoulder - ?32 ?30 dBc shldr [2] PAR peak-to-average ratio 8.5 9 - dB [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 6.1 Ruggedness in class-AB operation The BLF6G15L-500H and BLF6G15LS-500H are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: V =50 V; I = 1.3 A at rated power. DS Dq BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 ? 12 July 2013 3 of 13 BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 ? 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at V = 50 V; I = 1.3 A. DS Dq Mode of operation f P G ? IMD3 IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 ?24 - - [1] [2] DVB-T (8k OFDM) 1452 to 1492 65 16 19 - ?32 9 [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? Digital transmitter applications DVB at 1.5 GHz ? Industrial applications at 1.5 GHz BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 ? 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at V = 50 V; I = 1.3 A. DS Dq Mode of operation f P G ? IMD3 IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 ?24 - - [1] [2] DVB-T (8k OFDM) 1452 to 1492 65 16 19 - ?32 9 [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? Digital transmitter applications DVB at 1.5 GHz ? Industrial applications at 1.5 GHzBLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G15L-500H (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 BLF6G15LS-500H (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G15L-500H - flanged balanced LDMOST ceramic package; SOT539A 2 mounting holes; 4 leads BLF6G15LS-500H - earless flanged balanced LDMOST ceramic SOT539B package; 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage ?0.5 +13 V GS I drain current - 45 A D T storage temperature ?65 +150 ?C stg T junction temperature - 200 ?C j BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 ? 12 July 2013 2 of 13 BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 ? 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at V = 50 V; I = 1.3 A. DS Dq Mode of operation f P G ? IMD3 IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 ?24 - - [1] [2] DVB-T (8k OFDM) 1452 to 1492 65 16 19 - ?32 9 [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? Digital transmitter applications DVB at 1.5 GHz ? Industrial applications at 1.5 GHz BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 ? 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at V = 50 V; I = 1.3 A. DS Dq Mode of operation f P G ? IMD3 IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 ?24 - - [1] [2] DVB-T (8k OFDM) 1452 to 1492 65 16 19 - ?32 9 [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications ? Digital transmitter applications DVB at 1.5 GHz ? Industrial applications at 1.5 GHzBLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G15L-500H (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 BLF6G15LS-500H (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 [1] 5source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G15L-500H - flanged balanced LDMOST ceramic package; SOT539A 2 mounting holes; 4 leads BLF6G15LS-500H - earless flanged balanced LDMOST ceramic SOT539B package; 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage ?0.5 +13 V GS I drain current - 45 A D T storage temperature ?65 +150 ?C stg T junction temperature - 200 ?C j BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 ? 12 July 2013 2 of 13BLF6G15L-500H; BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =85 ?C; P = 65 W 0.18 K/W th(j-case) case L 6. Characteristics Table 6. DC characteristics T = 25 ?C; per section unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V drain-source breakdown voltage V =0V; I = 2.7 mA 100 - - V (BR)DSS GS D V gate-source threshold voltage V = 10 V; I = 270 mA 1.4 1.8 2.4 V GS(th) DS D I drain leakage current V =0V; V=50V --2.8 ?A DSS GS DS I drain cut-off current V =V + 3.75 V; 38 42 - A DSX GS GS(th) V =10V DS I gate leakage current V =11V; V=0V --280nA GSS GS DS g forward transconductance V =10V; I = 270 mA 1.33 2.3 - S fs DS D R drain-source on-state resistance V =V + 3.75 V; -100193m? DS(on) GS GS(th) I =9.5A D Table 7. RF characteristics RF characteristics in NXP class-AB production circuit, in frequency range 1452 MHz to 1492 MHz; T = 25 ?C. case Symbol Parameter Conditions Min Typ Max Unit DVB-T (8k OFDM), class-AB V drain-source voltage - 50 - V DS I quiescent drain current - 1.3 - A Dq P average output power - 65 - W L(AV) G power gain 14.5 16 - dB p ? drain efficiency 16 19 - % D [1] IMD intermodulation distortion shoulder - ?32 ?30 dBc shldr [2] PAR peak-to-average ratio 8.5 9 - dB [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 6.1 Ruggedness in class-AB operation The BLF6G15L-500H and BLF6G15LS-500H are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: V =50 V; I = 1.3 A at rated power. DS Dq BLF6G15L-500H_6G15LS-500H All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 ? 12 July 2013 3 of 13

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