Product Information

BLF644PU

BLF644PU electronic component of Ampleon

Datasheet
Trans JFET N-CH 65V 5-Pin SOT-1228A Bulk

Manufacturer: Ampleon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

60: USD 145.1827 ea
Line Total: USD 8710.96

0 - Global Stock
MOQ: 60  Multiples: 60
Pack Size: 60
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 60
Multiples : 60

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BLF644PU
Ampleon

60 : USD 188.9517

     
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BLF644P Broadband power LDMOS transistor Rev. 1 11 June 2013 Objective data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at T = 25 C in a common source test circuit. case Test signal f V P G IMD DS L p D (MHz) (V) (W) (dB) (%) (dBc) CW, class-A 860 32 90 22 <tbd> - CW pulsed, class-AB 860 32 100 23.5 66 <tbd> 2-tone, class-AB 860 32 45 23 <tbd> <tbd> 1.2 Features and benefits Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Communication transmitter applications in the HF to 1300 MHz frequency range Industrial applications in the HF to 1300 MHz frequency rangeBLF644P NXP Semiconductors Broadband power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain1 2drain2 3gate1 4gate2 1 DDD 5source 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF644P - flanged LDMOST ceramic package 2 mounting holes SOT1228A 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +11 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to case T = 80 C P = 90 W <tbd> K/W th(j-c) case L 1 R is measured under RF conditions. th(j-c) BLF644P All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Objective data sheet Rev. 1 11 June 2013 2 of 8

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