BLF188XRU

BLF188XR BLF188XRS Power LDMOS transistor Rev. 2 12 July 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 108 50 1200 26.5 83 pulsed RF 108 50 1400 28 72 pulsed RF 81.4 50 1200 25.8 85 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF188XR BLF188XRS NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF188XR (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 BLF188XRS (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF188XR - flanged balanced ceramic package 2 mounting holes 4 leads SOT539A BLF188XRS - earless flanged balanced ceramic package 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 135 V DS V gate-source voltage 6+11 V GS T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF188XR BLF188XRS All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Objective data sheet Rev. 2 12 July 2013 2 of 10