AON7534 30V N-Channel MOSFET General Description Product Summary V 30V Trench Power MOSFET technology DS Very Low R at 4.5V DS(on) GS I (at V =10V) 30A D GS Low Gate Charge R (at V =10V) < 5m DS(ON) GS High Current Capability R (at V = 4.5V) < 8.5m DS(ON) GS RoHS and Halogen-Free Compliant Application 100% UIS Tested DC/DC Converters in Computing, Servers, and POL 100% R Tested g Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP D Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7534 DFN 3x3 EP Tape & Reel 5000 AAbbssoolluuttee MMaaxxiimmuumm RRaattiinnggss TT ==2255CC uunnlleessss ootthheerrwwiissee nnootteedd AA Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T =25C 30 Continuous Drain C I D G T =100C Current 23 A C C Pulsed Drain Current I 120 DM T =25C 20 A Continuous Drain I A DSM Current T =70C 16 A C Avalanche Current I 32 A AS C Avalanche energy L=0.05mH E 26 mJ AS V Spike 100ns V 36 V DS SPIKE T =25C 23 C P W D B Power Dissipation T =100C 9 C T =25C 3 A P W DSM A Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 4.5 5.4 C/W JC www.aosmd.com Rev.1.0: April 2016 Page 1 of 6 AON7534 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.4 1.8 2.2 V GS(th) DS GS D V =10V, I =20A 4.1 5 GS D m R Static Drain-Source On-Resistance T =125C 5.6 6.8 DS(ON) J V =4.5V, I =20A 6.7 8.5 m GS D V =5V, I =20A g Forward Transconductance 91 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 28 A S DYNAMIC PARAMETERS C Input Capacitance 1037 1500 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 441 pF oss GS DS C Reverse Transfer Capacitance 61 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.5 2.3 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 15.5 22 nC g Q (4.5V) Total Gate Charge 6.8 10 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 3.0 nC gs Q Gate Drain Charge 3.6 nC gd t Turn-On DelayTime 5.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 3.3 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 1188 nnss D(off) GEN t Turn-Off Fall Time 4.3 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 12.7 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 17.2 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2016 www.aosmd.com Page 2 of 6