AOD4184A 40V N-Channel MOSFET General Description Product Summary V The AOD4184A combines advanced trench MOSFET DS 40V 50A technology with a low resistance package to provide I (at V =10V) D GS extremely low R . This device is well suited for high DS(ON) < 7m R (at V =10V) DS(ON) GS current load applications. < 9.5m R (at V = 4.5V) DS(ON) GS 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D G S G S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS Continuous Drain T =25C 50 C I G D Current T =100C 40 A C C Pulsed Drain Current I 120 DM T =25C 13 Continuous Drain A I A DSM Current T =70C 10 A C Avalanche Current I , I 35 A AS AR C Avalanche energy L=0.1mH E , E 61 mJ AS AR T =25C 50 C P W D B Power Dissipation T =100C 25 C T =25C 2.3 A P W DSM A Power Dissipation T =70C 1.5 A T , T Junction and Storage Temperature Range -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 18 22 C/W R JA A D Steady-State Maximum Junction-to-Ambient 44 55 C/W R Maximum Junction-to-Case Steady-State 2.4 3 C/W JC Rev0 : Sep 2009 www.aosmd.com Page 1 of 6 AOD4184A Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 40 V DSS D GS V =40V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.7 2.1 2.6 V GS(th) DS GS D I On state drain current V =10V, V =5V 120 A D(ON) GS DS V =10V, I =20A 5.8 7 GS D m R Static Drain-Source On-Resistance T =125C 9.6 12 DS(ON) J m V =4.5V, I =15A 7.6 9.5 GS D g Forward Transconductance V =5V, I =5A 37 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 20 A S DYNAMIC PARAMETERS C Input Capacitance 1200 1500 1800 pF iss V =0V, V =20V, f=1MHz C Output Capacitance 150 215 280 pF oss GS DS C Reverse Transfer Capacitance 80 135 190 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2 3.5 5 g GS DS SWITCHING PARAMETERS (10V) Q Total Gate Charge 21 27 33 nC g Q (4.5V) Total Gate Charge 10 14 17 nC g V =10V, V =20V, I =20A GS DS D Q Gate Source Charge 356 nC gs Q Gate Drain Charge 369 nC gd t Turn-On DelayTime 6ns D(on) t Turn-On Rise Time V =10V, V =20V, R =1, 17 ns r GS DS L t R =3 Turn-Off DelayTime GEN 30 ns D(off) t Turn-Off Fall Time 17 ns f t I =20A, dI/dt=100A/s 20 rr Body Diode Reverse Recovery Time F 29 38 ns Q I =20A, dI/dt=100A/s 18 nC rr Body Diode Reverse Recovery Charge F 26 34 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends on DSM JA the user s specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : Sep 2009 www.aosmd.com Page 2 of 6