AO3403 30V P-Channel MOSFET General Description Product Summary V The AO3403 uses advanced trench technology to provide DS -30V excellent R and low gate charge. This device is I (at V =-10V) -2.6A DS(ON) D GS suitable for use as a load switch or in PWM applications. R (at V =-10V) < 115m DS(ON) GS R (at V =-4.5V) < 150m DS(ON) GS R (at V =-2.5V) < 200m DS(ON) GS SSOOTT2233 DD TToopp VViieeww BBoottttoomm VViieeww DD DD GG GG SS SS SS GG Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --3300 VV DDSS Gate-Source Voltage V 12 V GS T =25C -2.6 A Continuous Drain I D Current T =70C -2.2 A A C Pulsed Drain Current I -13 DM T =25C 1.4 A P W D B T =70C Power Dissipation 0.9 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 70 90 C/W R JA A D Steady-State Maximum Junction-to-Ambient 100 125 C/W Maximum Junction-to-Lead Steady-State R 63 80 C/W JL Rev 10: Jan. 2011 www.aosmd.com Page 1 of 5 AO3403 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 12V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =-250A Gate Threshold Voltage -0.6 -1 -1.4 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -13 A GS DS D(ON) V =-10V, I =-2.6A 88 115 GS D m T =125C 143 200 J R Static Drain-Source On-Resistance DS(ON) V =-4.5V, I =-2A 103 150 m GS D V =-2.5V, I =-1A 139 200 m GS D g Forward Transconductance V =-5V, I =-2.6A 8 S DS D FS V Diode Forward Voltage I =-1A,V =0V -0.78 -1 V SD S GS I Maximum Body-Diode Continuous Current -1.5 A S DYNAMIC PARAMETERS C Input Capacitance 260 315 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 37 pF GS DS oss C Reverse Transfer Capacitance 20 pF rss R Gate resistance V =0V, V =0V, f=1MHz 4 8 12 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 5.9 7.2 nC g Q (4.5V) Total Gate Charge 2.8 3.5 nC g V =-10V, V =-15V, I =-2.6A GS DS D Q Gate Source Charge 0.7 nC gs Q Gate Drain Charge 1 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 66 nnss D(on) V =-10V, V =-15V, t Turn-On Rise Time 3.5 ns r GS DS R =5.76, R =3 t Turn-Off DelayTime 20 ns L GEN D(off) t Turn-Off Fall Time 5 ns f t I =-2.6A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 11.5 15 ns Q I =-2.6A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 4.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 10: Jan. 2011 www.aosmd.com Page 2 of 5