Product Information

MT46V64M8CV-5B IT:J

MT46V64M8CV-5B IT:J electronic component of Alliance Memory

Datasheet
DRAM DDR1 512M 64M X 8 84 BGA I TEMP , LEADED

Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.5343 ea
Line Total: USD 3.53

1854 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1678 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

MT46V64M8CV-5B IT:J
Alliance Memory

1 : USD 2.4265
10 : USD 2.208
100 : USD 1.978
500 : USD 1.9205
1000 : USD 1.8975
2000 : USD 1.6445
10000 : USD 1.6445
24000 : USD 1.6445

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Data Bus Width
Memory Size
Maximum Clock Frequency
Supply Voltage - Max
Supply Voltage - Min
Minimum Operating Temperature
Maximum Operating Temperature
Series
Organization
Brand
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
AS6C8008-55ZIN electronic component of Alliance Memory AS6C8008-55ZIN

SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
Stock : 8

AS7C256A-15JIN electronic component of Alliance Memory AS7C256A-15JIN

SRAM 256K, 5V, 15ns, FAST 32K x 8 Asynch SRAM
Stock : 0

AS7C31025B-12TJIN electronic component of Alliance Memory AS7C31025B-12TJIN

SRAM 1M, 3.3V, 12ns, FAST 128K x 8 Asynch SRAM
Stock : 98

AS7C256A-10TCN electronic component of Alliance Memory AS7C256A-10TCN

SRAM 256K, 5V, 10ns, FAST 32K x 8 Asynch SRAM
Stock : 200

AS4C32M16D1-5TCN electronic component of Alliance Memory AS4C32M16D1-5TCN

Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Stock : 1

AS8C163631-QC166N electronic component of Alliance Memory AS8C163631-QC166N

SRAM 16M, 2.5V, 166MHz 512K x 36 Synch SRAM
Stock : 4

U62256AS2K07LLG1 electronic component of Alliance Memory U62256AS2K07LLG1

SRAM ZMD 32K x 8 5V Asynch
Stock : 0

AS4C128M8D3LB-12BIN electronic component of Alliance Memory AS4C128M8D3LB-12BIN

DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
Stock : 1

AS7C1024B-15JCNTR electronic component of Alliance Memory AS7C1024B-15JCNTR

SRAM 1M, 5V, 15ns FAST 128K x 8 Asynch SRAM
Stock : 1

PC28F512P33BFD electronic component of Alliance Memory PC28F512P33BFD

NOR Flash Parallel NOR Flash, 512Mb, 2.3V to 3.6V, 95ns, Bottom Boot, -40C to 85C, 64b BGA
Stock : 0

Image Description
AS4C32M16D1-5TCN electronic component of Alliance Memory AS4C32M16D1-5TCN

Alliance Memory DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
Stock : 1

IS43TR16640BL-125JBL electronic component of ISSI IS43TR16640BL-125JBL

DRAM 1G, 1.35V, DDR3L, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS
Stock : 75

Hot IS43DR16320E-25DBLI electronic component of ISSI IS43DR16320E-25DBLI

DRAM 512M 32Mx16 400MHz DDR2 1.8V
Stock : 1901

W9751G6KB-25 electronic component of Winbond W9751G6KB-25

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin WBGA
Stock : 0

MT48LC4M32B2P-6A:L TR electronic component of Micron MT48LC4M32B2P-6A:L TR

DRAM SDRAM 128M 4MX32 TSOP
Stock : 0

IS42S32800J-75EBL electronic component of ISSI IS42S32800J-75EBL

DRAM 256M, 3.3V, SDRAM, 8Mx32, 133Mhz @ CL2, 90 ball BGA (8mmx13mm) RoHS
Stock : 0

IS43DR86400E-3DBLI electronic component of ISSI IS43DR86400E-3DBLI

DRAM 512M, 1.8V, DDR2, 64Mx8, 333Mhz @ CL5, 60 ball BGA (8mmx10.5mm) RoHS, IT
Stock : 242

AS4C128M8D3LB-12BIN electronic component of Alliance Memory AS4C128M8D3LB-12BIN

DRAM 1G 1.35V 800MHz 128Mx8 DDR3 I-Temp
Stock : 1

IS43R16320F-6TLI electronic component of ISSI IS43R16320F-6TLI

DRAM 512M 32Mx16 166MHz DDR 2.5V
Stock : 0

W631GG6NB-12 electronic component of Winbond W631GG6NB-12

DRAM 1Gb DDR3 SDRAM, x16, 800MHz
Stock : 1

512Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM MT46V128M4 32 Meg x 4 x 4 banks MT46V64M8 16 Meg x 8 x 4 banks MT46V32M16 8 Meg x 16 x 4 banks Features Options Marking V = 2.5V 0.2V, V = 2.5V 0.2V Configuration DD DDQ 1 V = 2.6V 0.1V, V = 2.6V 0.1V (DDR400) 128 Meg x 4 (32 Meg x 4 x 4 banks) 128M4 DD DDQ Bidirectional data strobe (DQS) transmitted/ 64 Meg x 8 (16 Meg x 8 x 4 banks) 64M8 32 Meg x 16 (8 Meg x 16 x 4 banks) 32M16 received with data, i.e., source-synchronous data Plastic package capture (x16 has two one per byte) 66-pin TSOP TG Internal, pipelined double-data-rate (DDR) 66-pin TSOP (Pb-free) P architecture two data accesses per clock cycle 2 60-ball FBGA (10mm x 12.5mm) FN Differential clock inputs (CK and CK ) 2 60-ball FBGA (10mm x 12.5mm) (Pb-free) BN Commands entered on each positive CK edge 3 60-ball FBGA (8mm x 12.5mm) CV DQS edge-aligned with data for READs center- 3 60-ball FBGA (8mm x 12.5mm) (Pb-free) CY aligned with data for WRITEs Timing cycle time DLL to align DQ and DQS transitions with CK 5ns CL = 3 (DDR400) -5B 2 Four internal banks for concurrent operation 6ns CL = 2.5 (DDR333) (FBGA only) -6 2 Data mask (DM) for masking write data 6ns CL = 2.5 (DDR333) (TSOP only) -6T Self refresh (x16 has two one per byte) Standard None Programmable burst lengths: 2, 4, or 8 Low-power self refresh L Auto refresh Temperature rating 64ms, 8192-cycle Commercial (0C to +70C) None Longer-lead TSOP for improved reliability (OCPL) Industrial (40C to +85C) IT 2.5V I/O (SSTL 2 compatible) Revision Concurrent auto precharge option is supported x4, x8, x16 :F t t t RAS lockout supported ( RAP = RCD) x4, x8, x16 :J Notes: 1. DDR400 devices operating at < DDR333 conditions can use V /V = 2.5V +0.2V. DD DDQ 2. Available only on Revision F. 3. Available only on Revision J. Table 1: Key Timing Parameters CL = CAS (READ) latency data-out window is MIN clock rate with 50% duty cycle at CL = 2, CL = 2.5, or CL = 3 Clock Rate (MHz) Speed Data-Out Access DQSDQ Grade CL = 2 CL = 2.5 CL = 3 Window Window Skew -5B 133 167 200 1.6ns 0.70ns 0.40ns -6 133 167 n/a 2.1ns 0.70ns 0.40ns 6T 133 167 n/a 2.0ns 0.70ns 0.45ns -75E/-75Z 133 133 n/a 2.5ns 0.75ns 0.50ns -75 100 133 n/a 2.5ns 0.75ns 0.50ns PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a Micron Technology, Inc., reserves the right to change products or specifications without notice. 512Mb DDR x4x8x16 D1.fm - 512Mb DDR: Rev. Q Core DDR Rev. E 7/11 EN 1 2000 Micron Technology, Inc. All rights reserved. 512Mb: x4, x8, x16 DDR SDRAM Features Table 2: Addressing Parameter 128 Meg x 4 64 Meg x 8 32 Meg x 16 Configuration 32 Meg x 4 x 4 banks 16 Meg x 8 x 4 banks 8 Meg x 16 x 4 banks Refresh count 8K 8K 8K Row address 8K (A0A12) 8K (A0A12) 8K (A0A12) Bank address 4 (BA0, BA1) 4 (BA0, BA1) 4 (BA0, BA1) Column address 4K (A0A9, A11, A12) 2K (A0-A9, A11) 1K (A0A9) Table 3: Speed Grade Compatibility Marking PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600 (2-2-2) 1 Yes Yes Yes Yes Yes Yes -5B Yes Yes Yes Yes Yes -6 Yes Yes Yes Yes Yes -6T Yes Yes Yes Yes -75E Yes Yes Yes -75Z Yes Yes -75 -5B -6/-6T -75E -75Z -75 -75 Notes: 1. The -5B device is backward compatible with all slower speed grades. The voltage range of -5B device operating at slower speed grades is V = V = 2.5V 0.2V. DD DDQ Figure 1: 512Mb DDR SDRAM Part Numbers Example Part Number: MT46V32M16P-6T:F - : Sp. MT46V Configuration Package Speed Temp. Revision Op. Revision :F x4, x8, x16 :J x4, x8, x16 Configuration 128 Meg x 4 128M4 Operating Temp 64 Meg x 8 64M8 Commercial 32 Meg x 16 32M16 IT Industrial Package Special Options 400-mil TSOP TG Standard 400-mil TSOP (Pb-free) P L Low power 10mm x 12.5mm FBGA FN Speed Grade BN 10mm x 12.5mm FBGA (Pb-free) t -5B CK = 5ns, CL = 3 8mm x 12.5mm FBGA CV t 8mm x 12.5mm FBGA (Pb-free) CY -6 CK = 6ns, CL = 2.5 t -6T CK = 6ns, CL = 2.5 FBGA Part Number System Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Microns Web site: www.micron.com. PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a Micron Technology, Inc., reserves the right to change products or specifications without notice. 512Mb DDR x4x8x16 D1.fm - 512Mb DDR: Rev. Q Core DDR Rev. E 7/11 EN 2 2000 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted