Product Information

AS4C64M16D3B-12BINTR

AS4C64M16D3B-12BINTR electronic component of Alliance Memory

Datasheet
DRAM Chip DDR3 SDRAM 1G-Bit 64Mx16 Bit 800MHz 1.5V 96-Pin FBGA T/R

Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.383 ea
Line Total: USD 7.38

1284 - Global Stock
Ships to you between
Mon. 29 Apr to Wed. 01 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11640 - Global Stock


Ships to you between Tue. 23 Apr to Mon. 29 Apr

MOQ : 2000
Multiples : 2000

Stock Image

AS4C64M16D3B-12BINTR
Alliance Memory

2000 : USD 6.4213
5000 : USD 5.9875

1284 - Global Stock


Ships to you between Mon. 29 Apr to Wed. 01 May

MOQ : 1
Multiples : 1

Stock Image

AS4C64M16D3B-12BINTR
Alliance Memory

1 : USD 7.383
10 : USD 6.9115
25 : USD 6.762
100 : USD 6.1295
250 : USD 6.0375
500 : USD 5.727
1000 : USD 5.543
2000 : USD 5.5315
4000 : USD 5.5315

     
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AS4C64M16D3B Revision History 1Gb DDR3 AS4C64M 16D3B 96ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Jan. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 86 - Rev.1.0 Jan.2018AS4C64M16D3B 64M x 16 bit DDR3 Synchronous DRAM (SDRAM) Advance (Rev. 1.0, Jan. /201 8) Features Overview JEDEC Standard Compliant The 1Gb Double-Data-Rate-3 DRAMs is double data rate architecture to achieve high-speed operation. Power supplies: V & V = +1.5V 0.075V DD DDQ It is internally configured as an eight bank DRAM. Industrial temperature: The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 : T = 0~95 C - Commercial C bank devices. These synchronous devices achieve - Industrial : T = -40~95 C C high speed double-data-rate transfer rates of up to Supports JEDEC clock jitter specification 1 600 Mb/sec/pin for general applications. Fully synchronous operation The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address Fast clock rate: 800MHz inputs are synchronized with a pair of externally Differential Clock, CK & CK supplied differential clocks. Inputs are latched at the Bidirectional differential data strobe cross point of differential clocks (CK rising and CK - DQS & DQS falling). All I/Os are synchronized with differential DQS 8 internal banks for concurrent operation pair in a source synchronous fashion. 8n-bit prefetch architecture These devices operate with a single 1.5V 0.075V Pipelined internal architecture power supply and are available in BGA packages. Precharge & active power down Programmable Mode & Extended Mode registers Additive Latency (AL): 0, CL-1, CL-2 Programmable Burst lengths: 4, 8 Burst type: Sequential / Interleave Output Driver Impedance Control 8192 refresh cycles / 64ms - Average refresh period 7.8 s -40 C TC +85 C 3.9 s +85 C TC +95 C Write Leveling ZQ Calibration Dynamic ODT (Rtt Nom & Rtt WR) RoHS compliant Auto Refresh and Self Refresh 96-ball 9 x 13 x 1.2mm FBGA package - Pb and Halogen Free Table 1. Ordering Information Temperature Org Max Clock (MHz) Product part No Package 800 Commercial 0C to 95C 96-ball FBGA AS4C64M16D3B-12BCN 64M x 16 800 Industrial -40C to 95C 96-ball FBGA AS4C64M16D3B-12BIN 64M x 16 Table 2. Speed Grade Information Speed Grade Clock Frequency CAS Latency t t (ns) (ns) RCD RP 800 MHz 11 13.75 13.75 DDR3-1600 Confidential - 2 of 86 - Rev.1.0 Jan.2018

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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