Product Information

AS4C32M16MS-7BCN

AS4C32M16MS-7BCN electronic component of Alliance Memory

Datasheet
DRAM 512M 1.8V 133MHz 32Mx16 LP MSDR

Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.1636 ea
Line Total: USD 9.16

2448 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2448 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

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AS4C32M16MS-7BCN
Alliance Memory

1 : USD 6.049
10 : USD 5.589
100 : USD 5.014
264 : USD 5.0025
528 : USD 4.7495
1056 : USD 4.554
2640 : USD 4.416
5016 : USD 4.3585
10032 : USD 4.232

     
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AS4C32M16MS-7BCN / AS4C32M16MS-6BIN AS4C16M32MS-7BCN / AS4C16M32MS-6BIN 512M Low Power Mobile SDRAM (MSDR) Revision History 512M AS4C32M16MS-7BCN/AS4C32M16MS-6BIN - 54 ball FBGA PACKAGE 512M AS4C16M32MS-7BCN/AS4C16M32MS-6BIN - 90 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet Jun 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/48 - Rev.1.0 June 2016AS4C32M16MS-7BCN / AS4C32M16MS-6BIN AS4C16M32MS-7BCN / AS4C16M32MS-6BIN Features - Drive Strength (DS) Option: Full, 1/2, 1/4 and 3/4 - 4 banks x 8Mbit x 16 organization - Auto Temperature Compensated Self Refresh - 4 banks x 4Mbit x 32 organization (Auto TCSR) - High speed data transfer rates up to 166 MHz - Partial Array Self Refresh (PASR) option: Full, 1/ - Full Synchronous Dynamic RAM, with all signals 2, 1/4, 1/8 and 1/16 referenced to clock rising edge - Deep Power D own (DPD) mode - Single Pulsed RAS Interface - Programmable Power Reduction Feature by patial - Data Mask for Read/Write Control array activation during Self-Refresh - Four Banks controlled by BA0 & BA1 - Operating Temperature Range - Programmable CAS Latency: 2, 3 Commercial (-25C to 85C) - Programmable Wrap Sequence: Industrial (-40C to +85 C) Sequential or Interleave - Programmable Burst Length: 1, 2, 4, 8, Full page for Sequential Type 1, 2, 4, 8 for Interleave Type - Multiple Burst Read with Single Write Operation - Automatic and Controlled Precharge Command - Random Column Address every CLK (1-N Rule) - Power Down Mode and Clock Suspend Mode - Auto Refresh and Self Refresh - Refresh Interval: 8192 cycles/64 ms - Available in 54-ball (32M x16) and 90-ball (16M x32)FBGA - VDD=1.8V, VDDQ=1.8V - LVTTL Interface Table 1. Key Specifications AS4C32M16MS/AS4C16M32MS -6/7 tCK(3) Clock Cycle time(min.) 6/7 .5 ns tAC(3) Access time from CLK (max.) 5/5.4 ns tRAS Row Active time(min.) 42/4 5 ns Row Cycle time(min.) 60/6 7.5 ns tRC Table 2. Ordering Information Part Number Org Temperature MaxClock (MHz) Package 133 AS4C32M 16MS-7BCN 54-ball FBGA 32Mx16 Commercial -25C to + 85C AS4C32M 16MS-6BIN 166 54-ball FBGA 32Mx16 Industrial -40C to +85C AS4C 16M32MS-7BCN 133 16Mx32 90-ball FBGA Commercial -25C to + 85C AS4C16M 32MS-6BIN 90-ball FBGA 16Mx32 Industrial -40C to +85C 166 Confidential - 2/48 - Rev.1.0 June 2016

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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