Product Information

2N5643

2N5643 electronic component of Advanced Semiconductor

Datasheet
Transistors RF Bipolar RF Transistor

Manufacturer: Advanced Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 74.9196 ea
Line Total: USD 74.9196

16 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

Stock Image

2N5643
Advanced Semiconductor

1 : USD 65.1475
10 : USD 59.225
25 : USD 57.247
50 : USD 55.2805
100 : USD 53.3025
250 : USD 51.3245
500 : USD 49.358

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Type
Brand
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C B E E FEATURES: C B Minimum Gain = 7.6 dB Output Power = 40 W I D H Omnigold Metalization System J G 8-32 UNC-2A F MAXIMUM RATINGS E I 5.0 A C MINIMUM MAXIMUM DIM inches / mm inches / mm V 65 V .220 / 5.59 .230 / 5.84 CBO A B .980 / 24.89 .370 / 9.40 .385 / 9.78 V 35 V C CEO .004 / 0.10 .007 / 0.18 D .320 / 8.13 .330 / 8.38 E V 4.0 V EBO .100 / 2.54 .130 / 3.30 F .450 / 11.43 .490 / 12.45 G P 60 W T = 25 C DISS C .090 / 2.29 .100 / 2.54 H .155 / 3.94 .175 / 4.45 I T -65 C to +200 C J .750 / 19.05 J T -65 C to +200 C STG 2.9 C/W JC CHARACTERISTICS T = 25 C C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 200 mA 35 V CEO C BV I = 200 mA 65 V C CES BV I = 10 mA 4.0 V EBO E I V = 30 V 1.0 mA CBO CB h V = 5.0 V I = 500 mA 5.0 --- --- FE CE C C V = 30 V f = 1.0 MHz 45 65 pF OB CB G V = 28 V P = 40 W f = 175 MHz 7.6 8.1 dB CE OUT P --- V = 10 V I = 200 mA f = 100 MHz 60 % CE C C A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1 Specifications are subject to change without notice. X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for RF Bipolar Transistors category: Click to view products by Advanced Semiconductor manufacturer: Other Similar products are found below : MAPRST0912-50 MCH4016-TL-H MMBT5551-G MRF10120 15GN01CA-TB-E PH1214-25M MAPRST0912-350 MMBTH10-TP BFP 640F H6327 BFP 720F H6327 BFP 740F H6327 BFR 360F H6765 MRF10031 NSVF4009SG4T1G BFP 182R E7764 BFP405H6740XTSA1 MRF10350 BFR360FH6765XTSA1 BFP410H6327XTSA1 BFP620FH7764XTSA1 BFP720ESDH6327XTSA1 BFP720FH6327XTSA1 BFR360L3E6765XTMA1 BFP420H6433XTMA1 BFP420H6740XTSA1 BFP420H6801XTSA1 MCH4015-TL-H BF888H6327XTSA1 MMBT2222A-G BFP196WH6327XTSA1 BFP405FH6327XTSA1 BFP640ESDH6327XTSA1 BFR193L3E6327XTMA1 BFS483H6327XTSA1 NSVF4020SG4T1G NSVF6003SB6T1G MRF10005 BFP420FH6327XTSA1 BFP740FESDH6327XTSA1 BFR181E6327HTSA1 BFR181WH6327XTSA1 BFR182E6327HTSA1 BFR193E6327HTSA1 BFP181E7764HTSA1 BFP183WH6327XTSA1 BFP720H6327XTSA1 BFR182WH6327XTSA1 BFU590GX MAPR-000912-500S00 BFR340FH6327XTSA1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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