Product Information

SLSD-71N100

SLSD-71N100 electronic component of Advanced Photonix

Datasheet
PHOTODIODE, PLANAR

Manufacturer: Advanced Photonix
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.2694 ea
Line Total: USD 8.27

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

SLSD-71N100
Advanced Photonix

1 : USD 7.6532
10 : USD 6.6732
25 : USD 5.9767
50 : USD 5.2715
100 : USD 4.3907
500 : USD 4.3328

     
Manufacturer
Product Category
Peak Wavelength
Dark Current
Brand
No. Of Pins
Diode Case Style
Wavelength Of Peak Sensitivity
Angle Of Half Sensitivity ±
Operating Temperature Min
Operating Temperature Max
Active Area
Breakdown Voltage Vbr
Diode Type
External Depth
External Length / Height
Height
Lead Length
Open Circuit Voltage
Operating Temperature Range
Reverse Voltage Vr Max
Sensitivity
Short Circuit Current
Wavelength Typ
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SLSD -71N1 SLSD -71N1 / Solderable Planar Photodiode Features Visible and IR spectral response High reliability +RED (Anode) Oxide passivation 1.0 150 nom. Linear short circuit current 5.08 Low capacitance, high speed 5.1 Protective coating 2.54 Available in arrays where indicates number of elements ( maximum of 9 elements ) -BLK (Cathode) Description 32 AWG Wire Sensitive Area The Silonex series of silicon solderable planar (10.4 sq. mm.) Dimensions in mm. photodiodes feature low cost, high reliability, and linear short circuit current over a wide range of Also available without leads as part number SLCD-61N1 illumination. These devices are widely used for light sensing and power generation because of their Directional Sensitivity Characteristics stability and high efficiency. They are particularly 40 30 20 50 10 1.0 suited to power conversion applications due to their Half Angle = 60 low internal impedance, relatively high shunt .8 impedance, and stability. The photodiodes have a 60 .6 protective coating that protects them from humidity effects. The electrical characteristics below are per 70 .4 element. In the multielement arrays the cathodes are .2 common to a single cathode wire. 80 0 90 Absolute Maximum Ratings Storage Temperature -40C to +105C o 100 1.0 20 40 60 80 100 120 .8 .6 .4 0 Operating Temperature -40C to +105C Electrical Characteristics (T =25C unless otherwise noted) A Symbol Parameter Min Typ Max Units Test Conditions 2 I Short Circuit Current 0.4 0.5 mA V =0V, Ee=25mW/cm (1) SC R 2 V Open Circuit Voltage 0.40 V Ee=25mw/cm (1) OC I Reverse Dark Current 1.7 V =5V, Ee=0 A D R C Junction Capacitance 0.4 nF V =0V, Ee=0, f=1MHz J R Spectral Sensitivity 0.55 A/W S =940nm V Reverse Breakdown Voltage 20 V I =100A BR R Maximum Sensitivity Wavelength 930 nm P Sensitivity Spectral Range 400 1100 nm R Acceptance Half Angle 60 deg (off center-line) 1/2 Notes: (1) Ee = light source 2854 K Specifications subject to change without notice 101391 REV 8 5200 St. Patrick St., Montreal The Old Railway, Princes Street Que., H4E 4N9, Canada Ulverston, Cumbria, LA12 7NQ, UK Tel: 514-768-8000 Tel: 01 229 581 551 Fax: 514-768-8889 Fax: 01 229 581 554 QF-84X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Advanced Photonix manufacturer: Other Similar products are found below : NSL-32SR3 SLCD-61N5 NSL 4962 SLD-70 BG2A NSL 06S53 NORPS-12 NSL 19M51

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

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