Product Information

AT25SF321B-SSHB-B

AT25SF321B-SSHB-B electronic component of Dialog Semiconductor

Datasheet
NOR Flash 32 Mbit 3.0V 2.7V to 3.6V -40C to 85C SOIC-N 150mil Tube Single Dual Quad SPI NOR flash

Manufacturer: Dialog Semiconductor
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Price (USD)

1: USD 1.0715 ea
Line Total: USD 1.0715

15465 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11461 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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AT25SF321B-SSHB-B
Dialog Semiconductor

1 : USD 0.8361
98 : USD 0.6693
588 : USD 0.598
1078 : USD 0.5313
2548 : USD 0.4945
5096 : USD 0.4945
10094 : USD 0.4784
25088 : USD 0.4588

     
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DATASHEET AT25SF321B 32-Mbit SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support Features Serial Peripheral Interface (SPI) Compatible - Supports SPI modes 0 and 3 (1,1,1) - Supports dual input and dual output operation (1,1,2) - Supports quad input and quad output operation (1,1,4) - Supports quad I/O operation (1,4,4 and 0,4,4) 108 MHz Maximum Operating Frequency Single 2.7 V - 3.6 V Single Supply Voltage Continuous Read modes Serial Flash Discoverable Parameters (SFDP, JDES216B) support OTP Memory - Three Protected Programmable Security Register Pages (Page size: 256 bytes) - 64-bit factory programmable UID register Hardware Write Protection (WP pin) Software Write protection (Programmable non-volatile control registers) Program and Erase Suspend and Resume Byte programming size: up to 256 bytes Erase Size and Duration - Uniform 4-kbyte Block Erase (50 ms typical) - Uniform 32-kbyte Block Erase (150 ms typical) - Uniform 64-kbyte Block Erase (300 ms typical) - Full Chip Erase (15 seconds typical) Low Power Dissipation - Standby Current (25 A maximum) - Deep Power Down Current (5 A maximum) Endurance: 100,000 Program and Erase Cycles Data Retention: 20 Years o o Industrial Temperature Range (-40 C to 85 C) Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options - 8-lead SOIC (0.150 Narrow and 0.208 Wide) - 8-pad Ultra-Thin DFN (5 x 6 x 0.6 mm) - Die Wafer Form - Other Package Options (contact Adesto) DS-AT25SF321B179D05-2020Table of Contents 1. Product Overview 3 2. Pin Descriptions and Package Pinouts .4 3. Block Diagram .6 4. Memory Array .7 5. Device Operation 9 5.1 Dual Output Read (1-1-2) 9 5.2 Dual I/O Read (1-2-2) . 9 5.3 Quad Output Read (1-1-4) . 9 5.4 Quad I/O Read (1-4-4) 9 6. Commands and Addressing .10 7. Read Commands .12 7.1 Read Array (0Bh and 03h) 12 7.2 Dual-Output Read Array (3Bh) . 13 7.3 Dual-I/O Fast Read Array (BBh) 13 7.3.1 Dual-I/O Fast Read Array (BBh) with Continuous Read Mode 14 7.4 Quad Output Fast Read Array (6Bh) 15 7.5 Quad-I/O Fast Read Array (EBh) . 15 7.5.1 Quad-I/O Fast Read Array (EBh) with Continuous Read Mode .16 7.5.2 Set Burst with Wrap (77h) 17 7.6 Quad-I/O Word Fast Read (E7h) . 18 7.6.1 Quad I/O Word Fast Read with Continuous Read Mode .18 7.6.2 Quad I/O Word Fast Read with 8-, 16-, 32-, 64-Byte Wrap Around in Standard SPI Mode 19 7.7 Read Serial Flash Discoverable Parameter (5Ah) 19 8. Program and Erase Commands 20 8.1 Byte/Page Program (02h) . 20 8.2 Quad Page Program (32h) 21 8.3 Block Erase (20h, 52h, or D8h) 22 8.4 Chip Erase (60h or C7h) . 22 8.5 Program/Erase Suspend (75h) . 23 8.6 Program/Erase Resume (7Ah) . 24 9. Protection Commands and Features 25 9.1 Write Enable (06h) 25 9.2 Write Disable (04h) 25 9.3 Non-Volatile Protection . 26 9.4 Protected States and the Write Protect Pin . 27 9.5 Enable Reset (66h) and Reset Device (99h) 28 10. Security Register Commands 29 10.1 Read Unique ID Number (4Bh) 29 10.2 Erase Security Registers (44h) 30 10.3 Program Security Registers (42h) 31 10.4 Read Security Registers (48h) . 32 AT25SF321B 1 DS-AT25SF321B179D05-2020

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ADESTO
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation

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