Product Information

AT25SF161-SHD-B

AT25SF161-SHD-B electronic component of Dialog Semiconductor

Datasheet
NOR Flash 16 Mbit, 3.0V (2.5V to 3.6V), -40C to 85C, SOIC-W 208mil (Tube), Single, Dual, Quad SPI NOR flash

Manufacturer: Dialog Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 6750
Multiples : 1

Stock Image

AT25SF161-SHD-B
Dialog Semiconductor

6750 : USD 0.3563
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

AT25SF161-SHD-B
Dialog Semiconductor

1 : USD 1.6829
10 : USD 0.8316
50 : USD 0.6017
90 : USD 0.5375
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

AT25SF161-SHD-B
Dialog Semiconductor

1 : USD 0.8704
5 : USD 0.6366
11 : USD 0.4874
51 : USD 0.4675
90 : USD 0.4576
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Packaging
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Cnhts
Hts Code
Mxhts
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Following the acquisition of Adesto Technologies, Dialog Semiconductor offers memory products as part of its product portfolio. The existing content from datasheets, including part numbers and codes should be used. Terms of Purchase are provided on the Dialog website AT25SF161 adesto TECHNOLOGIES C 16-Mbit, 2.5V Minimum SPI Serial Flash Memory with Dual-I/0 and Quad-IQ Support Features Not recommended Single 2.5V - 3.6V Supply Serial Peripheral Interface (SPI) Compatible for new designs. Supports SPI Modes 0 and 3 Supports Dual and Quad Output Read Use AT25SF161B. 104MHz Maximum Operating Frequency Clock-to-Output (tv) of 6 ns Flexible, Optimized Erase Architecture for Code + Data Storage Applications Uniform 4-Kbyte Block Erase Uniform 32-Kbyte Block Erase Uniform 64-Kbyte Block Erase Full Chip Erase Hardware Controlled Locking of Protected Blocks via WP Pin 3 Protected Programmable Security Register Pages Flexible Programming Byte/Page Program (1 to 256 Bytes) Fast Program and Erase Times 0.7ms Typical Page Program (256 Bytes) Time Oms Typical 4-Kbyte Block Erase Time 300ms Typical 32-Kbyte Block Erase Time 600ms Typical 64-Kbyte Block Erase Time JEDEC Standard Manufacturer and Device ID Read Methodology Low Power Dissipation 2A Deep Power-Down Current (Typical) 1 0A Standby current (Typical) 4mA Active Read Current (Typical) Endurance: 100,000 Program/Erase Cycles Data Retention: 20 Years Complies with Full Industrial Temperature Range Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options 8-lead SOIC (150-mil and 208-mil) 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm) Die in Wafer Form Hi-Rel Plastic Available 8-ball die Ball Grid Array (dBGA - WLCSP) DS-25SF161-046I-02/2021

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ADESTO
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation

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