Product Information

AT25DL081-SSHN-T

AT25DL081-SSHN-T electronic component of Dialog Semiconductor

Datasheet
Flash Memory 8M 1.65-1.95V 100Mhz Serial Flash

Manufacturer: Dialog Semiconductor
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Price (USD)

1: USD 2.6364 ea
Line Total: USD 2.6364

7766 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7737 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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AT25DL081-SSHN-T
Dialog Semiconductor

1 : USD 1.9078
10 : USD 1.7147
100 : USD 1.5577
500 : USD 1.5335
1000 : USD 1.4852
2000 : USD 1.4007
4000 : USD 1.3765
24000 : USD 1.3645

     
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RoHS - XON
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AT25DL081 8-Mbit, 1.65V Minimum SPI Serial Flash Memory with Dual-I/O Support DATASHEET Features Single 1.65V - 1.95V supply Serial Peripheral Interface (SPI) compatible Supports SPI Modes 0 and 3 Supports RapidS operation Supports Dual-Input Program and Dual-Output Read Very high operating frequencies 100MHz for RapidS 85MHz for SPI Clock-to-output time (t ) of 5ns maximum V Flexible, optimized erase architecture for code + data storage applications Uniform 4KB, 32KB, and 64KB Block Erase Full Chip Erase Individual sector protection with Global Protect/Unprotect feature 16 sectors of 64KB each Hardware controlled locking of protected sectors via WP pin Sector Lockdown with permanent freeze option Make any combination of 64KB sectors permanently read-only 128-byte, One-Time Programmable (OTP) Security Register 64-bytes factory pre-programmed, 64-bytes user programmable Flexible programming Byte/Page Program (1 to 256 bytes) Fast Program and Erase times 1.0ms typical Page Program (256 bytes) time 50ms typical 4KB Block Erase time 250ms typical 32KB Block Erase time 550ms typical 64KB Block Erase time Program and Erase Suspend/Resume Automatic checking and reporting of erase/program failures Software controlled reset JEDEC Standard Manufacturer and Device ID Read Methodology Low power dissipation 10mA Active Read current (typical at 20MHz) 8A Deep Power-Down current (typical) Endurance: 100,000 program/erase cycles Data retention: 20 years Complies with full industrial temperature range Industry standard green (Pb/halide-free/RoHS-compliant) package options 8-lead SOIC (0.150 wide) 8-pad Ultra-thin DFN (5 x 6 x 0.6mm) 8732GDFLASH11/20171. Description The Adesto AT25DL081 is a serial interface Flash memory device designed for use in a wide variety of high-volume, consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DL081, with its erase granularity as small as 4KB, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices. The physical sectoring and the erase block sizes of the AT25DL081 have been optimized to meet the needs of today s code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added, while still maintaining the same overall device density. The AT25DL081 also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applications where the program code is patched, updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabilities, the AT25DL081 incorporates Global Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process because sectors do not have to be unprotected one by one prior to initial programming. To take code and data protection to the next level, the AT25DL081 incorporates a sector lockdown mechanism that allows any combination of individual 64KB sectors to be locked down and become permanently read-only. This addresses the need of certain secure applications that require portions of the Flash memory array to be permanently protected against malicious attempts at altering program code, data modules, security information, or encryption/decryption algorithms, keys, and routines. The device also contains a specialized, OTP (One-Time Programmable) security register, which can be used for unique device serialization, system-level electronic serial number (ESN) storage, locked key storage, or other purposes. Specifically designed for use in 1.8V systems, the AT25DL081 supports read, program, and erase operations with a supply voltage range of 1.65V to 1.95V. No separate voltage is required for programming and erasing. AT25DL081 DATASHEET 2 8732GDFLASH11/2017

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ADESTO
Adesto Technologies
Dialog Semiconductor GmbH
DLG
Echelon / Adesto
Echelon Corporation

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