Product Information

STPS10L60CFP

STPS10L60CFP electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers 2X5 Amp 60 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8875 ea
Line Total: USD 0.89

388 - Global Stock
Ships to you between
Tue. 07 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
388 - Global Stock


Ships to you between
Tue. 07 May to Fri. 10 May

MOQ : 1
Multiples : 1

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STPS10L60CFP
STMicroelectronics

1 : USD 0.8875
10 : USD 0.6375
50 : USD 0.4816
100 : USD 0.4281
500 : USD 0.3962
1000 : USD 0.3803

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
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STPS10L60C Power Schottky rectifier Features A1 K Low forward voltage drop A2 Negligible switching losses Insulated package: Insulating voltage = 2000 V DC Capacitance = 12 pF Avalanche capability specified A2 K Description A1 Dual center tap Schottky rectifier suited for switch TO-220FPAB mode power supplies and high frequency DC to STPS10L60CFP DC converters. Packaged in TO-220FPAB, this device is intended for use in high frequency inverters. Table 1. Device summary I 2 x 5 A F(AV) V 60 V RRM T 150 C j (max) V 0.52 V F (max) May 2011 Doc ID 6426 Rev 5 1/7 www.st.com 7Characteristics STPS10L60C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 30 A F(RMS) T = 130 C Per diode 5 C I Average forward current A F(AV) = 0.5 Per device 10 I Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A FSM I Repetitive peak reverse current tp = 2 s square F=1 kHz 1 A RRM tp = 1 s T = 25 C P Repetitive peak avalanche power 4000 W j ARM -65 to + T Storage temperature range C stg 175 (1) T Maximum operating junction temperature 150 C j dV/dt Critical rate of rise reverse voltage 10000 V/s dPtot 1 --------------- -------------------------- 1. < thermal runaway condition for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 4.5 R Junction to case C/W th (j-c) Total 3.5 R Coupling 2.5 C/W th (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit 220 T = 25 C A j (1) I Reverse leakage current V = V R R RRM 45 60 T = 125 C mA j I = 5 A 0.55 T = 25 C j F T = 125 C I = 5 A 0.43 0.52 F j (1) V Forward voltage drop V F I = 10 A 0.67 T = 25 C F j I = 10 A 0.55 0.64 T = 125 C F j 1. Pulse test : tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.44 x I + 0.0091x I F(AV) F (RMS) 2/7 Doc ID 6426 Rev 5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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