Product Information

SST39WF1601-70-4I-B3KE

SST39WF1601-70-4I-B3KE electronic component of Microchip

Datasheet
Flash 16M (1Mx16) 70ns 1.65-1.95V Indust

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.691 ea
Line Total: USD 2.69

3425 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1
1 : USD 6.9587
10 : USD 6.6473
30 : USD 6.4583
100 : USD 6.2994

3425 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1
1 : USD 2.691
10 : USD 2.6335
25 : USD 2.6335

     
Manufacturer
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RoHS - XON
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Mxhts
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Programming Voltage
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Taric
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16 Mbit (x16) Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Data Sheet The SST39WF1601 / SST39WF1602 are a 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) devices manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injec- tor attain better reliability and manufacturability compared with alternate approaches. The SST39WF1601 / SST39WF1602 write (Program or Erase) with a 1.65-1.95V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Features Organized as 1M x16 Security-ID Feature SST: 128 bits User: 128 bits SingleVoltage Read andWrite Operations Fast Read AccessTime: 1.65-1.95V 70 ns Superior Reliability Latched Address and Data Endurance: 100,000 Cycles (Typical) Greater than 100 years Data Retention Fast Erase andWord-Program: Low Power Consumption (typical values at 5 MHz) Sector-Erase Time: 36 ms (typical) Active Current: 5 mA (typical) Block-Erase Time: 36 ms (typical) Standby Current: 5 A (typical) Chip-Erase Time: 140 ms (typical) Auto Low Power Mode: 5 A (typical) Word-Program Time: 28 s (typical) Hardware Block-Protection/WP Input Pin AutomaticWriteTiming Top Block-Protection (top 32 KWord) Internal V Generation PP for SST39WF1602 Bottom Block-Protection (bottom 32 KWord) End-of-Write Detection for SST39WF1601 Toggle Bits Data Polling Sector-Erase Capability Uniform 2 KWord sectors CMOS I/O Compatibility Block-Erase Capability JEDEC Standard Uniform 32 KWord blocks Flash EEPROM Pin Assignments and Command Sets Chip-Erase Capability Packages Available Erase-Suspend/Erase-Resume Capabilities 48-ball TFBGA (6mm x 8mm) 48-ball WFBGA (4mm x 6mm) Hardware Reset Pin (RST ) AlldevicesareRoHScompliant AEC-Q100-qualifieddevicesavailable 2013 Silicon Storage Technology, Inc. www.microchip.com DS-20005014B 11/201316 Mbit Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 Data Sheet Product Description The SST39WF1601/1602 devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick- oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39WF1601/1602 write (Program or Erase) with a 1.65-1.95V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Featuring high performance Word-Program, the SST39WF1601/1602 devices provide a typical Word- Program time of 28 sec. These devices use Toggle Bit or Data Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39WF1601/1602 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro- gram times increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST39WF1601/1602 are offered in both 48-ball TFBGA and 48-ball WFBGA packages. See Figures 2 and 3 for pin assignments. 2013 Silicon Storage Technology, Inc. DS-20005014B 11/2013 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
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Microsemi Analog Mixed Signal Group
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Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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