RSAC16CST2RA

Ultra Low Capacitance ESD Protection Diode RSAC16CS Data Sheet lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm) ESD Protection 0 .1 6 0 .0 5 0.55 0 .6 0 .0 5 lFeatures 1) Ultra small mold type (VMN2) 2) Ultra low Capacitance VMN2 3) High reliability lStructure 4) By chip-mounter, 0.156 automatic mounting is possible. 0 .3 7 0 .0 3 0 .3 5 0 .1 ROHM : VMN2 dot (year week factory) lConstruction lTaping specifications (Unit : mm) Silicon epitaxial planar 1.55 0 .2 0 .0 5 f1.55 4 0 .1 2 0 .0 5 f0.05. 5 0.52 2 0 .0 5 0 .7 0 .0 5 4 .0 0 .1 lAbsolute maximum ratings (T = 25C) a Parameter Symbol Limits Unit Power dissipation P 100 mW T Junction temperature 150 C j T Storage temperature -55 to +150 C stg lElectrical characteristics (T = 25C) a Parameter Conditions Symbol Min. Typ. Max. Unit Zener voltage V 16.49 - 17.51 V I =5mA Z Z Reverse current I - - 0.1 V =12V mA R R C V =0V, f=1MHz Capacitance between terminals - 0.3 - pF t R * Zener voltage (V ) shall be measured at 40ms after loading current. Z * Electrical characteristic assurance is just only zener direction. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.11 - Rev.B 1/4 1 .1 0 .0 5 0 .9 0 .0 5 1 .0 0 .0 5 0.45 0.45 3 .5 0 .0 5 1 .7 5 0 .1 8 .0 0 .2 0.5Data Sheet RSAC16CS lElectrical characteristic curves 10 10000 T = -25 C a T = 150 C T = 125 C a a T = 25 C a 1000 T = 75 C a 1 100 T = 75 C a T = 125 C a 10 T = 25 C 0.1 a 1 0.01 0.1 15 17 19 0 5 10 15 ZENER VOLTAGE : V (V) REVERSE VOLTAGE : V (V) Z R V -I CHARACTERISTICS V -I CHARACTERISTICS Z Z R R 1 20 f = 1MHz T =25 C a I =5mA Z 19 n=20pcs 18 Ave. : 17.35V 17 16 0.1 15 0 5 10 15 REVERSE VOLTAGE : V (V) R V DISPERSION MAP Z V -C CHARACTERISTICS R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.11 - Rev.B 2/4 CAPACITANCE BETWEEN ZENER CURRENT : I (mA) Z TERMINALS : C (pF) t ZENER VOLTAGE : V ( ) REVERSE CURRENT : I (pA) Z R