RN262CST2R

PIN diode RN262CS z Applications z Dimensions (Unit : mm) z Land size figure (Unit : mm) High frequency switching 0.55 z Features VMN2 1) Ultra small mold type. (VMN2) 2) Low high-frequency forward resistance / low capacitance (CT). z Structure z Construction z Taping dimensions (Unit : mm) Silicon epitaxial planar z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage 30 V V R Forward current I 100 mA F Power dissipation P 100 mW d Junction temperature Tj 150 C Storage temperature -55 to +150 Tstg C z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V -- 1 V I =10mA F F Reverse current I - - 0.1 A V =30V R R Capacitance between terminals Ct - - 0.4 pF V =1V , f=1MHz R - - 2.8 I =3mA,f=100MHz F High frequency resistance Rf - - 1.5 I =10mA,f=100MHz F www.rohm.com 2009.12 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/2 0.45 0.45 0.5RN266CS Data Sheet z Electrical characteristics curves 100 10 1000 Ta=150 C Ta=125 C f=1MHz Ta=150 C 100 Ta=125 C Ta=75 C 1 10 10 Ta=75 C 1 Ta=25 C 0.1 0.1 1 Ta=25 C Ta=-25 C Ta=-25 C 0.01 0.001 0.01 0.1 0 1020 304050 01 234 5678 9 10 0 100 200 300 400 500 600 700 800 900 1000 1100 REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R R FORWARD VOLTAGE : V (mV) F V -Ct CHARACTERISTICS V -I CHARACTERISTICS R R R V -I CHARACTERISTICS F F 1 860 100 Ta=25 C Ta=25 C V =0V I =10mA R F f=1MHz 850 n=30pcs f=10MHz 10 840 830 f=100MHz 1 820 AVE:831.3mV 0.1 0.1 810 0.1 1 10 1 10 100 1000 FORWARD CURRENT:I (mA) FREQUENCY(MHz) F V DISPERSION MAP F rf-I CHARACTERISTICS Ct-f CHARACTERISTICS F 0.5 0.5 1.5 Ta=25 C Ta=25 C Ta=25 C 1.4 V =30V f=1MHz f=100MHz R 0.4 0.4 1.3 V =1V I =3mA R F n=30pcs n=10pcs n=10pcs 1.2 0.3 1.1 0.3 1 0.9 0.2 0.2 0.8 AVE:0.05824nA 0.7 0.1 0.1 AVE:1.334 AVE:0.256pF 0.6 0.5 0 0 FORWARD CURRENT:I (mA) F I DISPERSION MAP R Ct DISPERSION MAP rf DISPERSION MAP 5 1.5 Ta=25 C 1.4 f=100MHz 4 1.3 I =10mA F n=10pcs 1.2 3 1.1 1 AVE:1.67kV 2 0.9 AVE:0.46kV 0.8 1 0.7 AVE:0.732 0.6 C=200pF C=100pF 0 0.5 R=0 R=1.5k FORWARD CURRENT:I (mA) F ESD DISPERSION MAP rf DISPERSION MAP www.rohm.com 2009 ROHM Co., Ltd. All rights reserved. 2/2 2009.12 - Rev.A FORWARD OPERATING FORWARD OPERATING FORWARD CURRENT : I (mA) F RESISTANCE:rf( ) REVERSE CURRENT:I (nA) R RESISTANCE:rf( ) CAPACITANCE BETWEEN CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R ELECTROSTATIC TERMINALS:Ct(pF) TERMINALS:Ct(pF) DDISCHARGE TEST ESD(KV) FORWARD OPERATING CAPACITANCE BETWEEN FORWARD VOLTAGE:VF(mV) TERMINALS : Ct(pF) RESISTANCE:rf( )