Product Information

Q62702P0073

Q62702P0073 electronic component of OSRAM

Datasheet
Photodiode PIN Chip 850nm 0.62A/W Sensitivity 2-Pin DILP

Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

81: USD 0.7151 ea
Line Total: USD 57.92

0 - Global Stock
MOQ: 81  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 81
Multiples : 1
81 : USD 0.7151
100 : USD 0.6568

     
Manufacturer
Product Category
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Type
Reverse Breakdown Voltage
Photodiode Material
Forward Voltage
Responsivity
Photodiode Type
Rad Hardened
Light Current
Operating Temperature Classification
Mounting
Operating Temp Range
Pin Count
Polarity
Power Dissipation
Package Type
LoadingGif

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2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 BPW 34 Features: Besondere Merkmale: Especially suitable for applications from 400 nm to Speziell geeignet fr Anwendungen im Bereich von 1100 nm 400 nm bis 1100 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) DIL plastic package with high packing density DIL-Plastikbauform mit hoher Packungsdichte Applications Anwendungen Photointerrupters Lichtschranken Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln IR remote control of hi-fi and TV sets, video tape IR-Fernsteuerung von Fernseh- und recorders, dimmers, remote controls of various Rundfunkgerten, Videorecordern, Lichtdimmern, equipment Gertefernsteuerungen Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer E = 1000 lx, Std. Light A, V = 5 V v R I A P BPW 34 80 ( 50) Q62702P0073 2014-01-10 1Version 1.1 BPW 34 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 32 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Spectral sensitivity S80 nA/Ix Fotoempfindlichkeit (V = 5 V, standard light A, T = 2856 K) R Photocurrent I 80 ( 50) A P Fotostrom (E = 1000 lx, Std. Light A, V = 5 V) v R Wavelength of max. sensitivity 850 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 400 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A7.02 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.65 x 2.65 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.62 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 850 nm) 2014-01-10 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
AMS OSRAM
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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