Product Information

MDD200-18N1

MDD200-18N1 electronic component of IXYS

Datasheet
IXYS Discrete Semiconductor Modules 200 Amps 1800V

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 86.7536 ea
Line Total: USD 86.7536

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1
1 : USD 87.0895
12 : USD 80.7875
30 : USD 79.028
54 : USD 79.028
102 : USD 78.5795

0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1
1 : USD 101.4707

     
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RoHS - XON
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Type
Vr - Reverse Voltage
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MDD200-18N1 V = 2x1800 V RRM Standard Rectifier Module I = 224 A FAV V = 1.07 V F Phase leg Part number MDD200-18N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y4 Package with DCB ceramic Diode for main rectification Isolation Voltage: V~ 3600 Improved temperature and power cycling For single and three phase Industry standard outline Planar passivated chips bridge configurations RoHS compliant Very low forward voltage drop Supplies for DC power equipment Height: 30 mm Very low leakage current Input rectifiers for PWM inverter Base plate: DCB ceramic Battery DC power supplies Reduced weight Field supply for DC motors Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d 2019 IXYS all rights reservedMDD200-18N1 Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1900 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1800 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 8 0 0 V T = 25C 1 mA R VJ R V = 1 8 0 0 V T = 1 5 0 C 20 mA R VJ forward voltage drop V I = 3 0 0 A T = 25C 1.16 V F F VJ I = 6 0 0 A 1.39 V F T = C 1.07 V I = 3 0 0 A 125 F VJ I = 6 0 0 A 1.36 V F average forward current T = 1 0 0 C T = 1 5 0 C 224 A I FAV C VJ RMS forward current I 180 sine d = 0.5 350 A F(RMS) V T = 1 5 0 C 0.80 V threshold voltage F0 VJ for power loss calculation only slope resistance r 0.6 m F thermal resistance junction to case 0.13 K/W R thJC thermal resistance case to heatsink K/W R 0.08 thCH P total power dissipation T = 25C 960 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 10.5 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 11.3 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C kA 8.93 VJ t = 8,3 ms (60 Hz), sine V = 0 V 9.64 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 551.3 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 535.0 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 398.3 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 386.6 kAs R V = 1 1 0 0 V f = 1 MHz T = 25C 230 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191204d 2019 IXYS all rights reserved

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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