BFU660F,115

BFU660F NPN wideband silicon RF transistor Rev. 1 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high linearity RF transistor High output third-order intercept point 27 dBm at 1.8 GHz 40 GHz f silicon technology T 1.3 Applications Analog/digital cordless applications X-band high output buffer amplifier ZigBee SDARS second stage LNA LTE, cellular, UMTSBFU660F NXP Semiconductors NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 16 V CBO V collector-emitter voltage open base - - 5.5 V CEO V emitter-base voltage open collector - - 2.5 V EBO I collector current - 30 60 mA C 1 P total power dissipation T 90 C -- 225mW tot sp h DC current gain I =10mA V =2V 90 135 180 FE C CE T =25 C j C collector-base capacitance V = 2 V f = 1 MHz - 138 - fF CBS CB f transition frequency I =20mA V =1V -21 - GHz T C CE f=2GHz T =25 C amb IP3 output third-order intercept I =40mA V =4V -28 - dBm O C CE point f=5.8GHz T =25 C amb 2 G maximum power gain I =30mA V =1V -24 - dB p(max) C CE f=1.8GHz T =25 C amb NF noise figure I =6mA V =2V -0.65 - dB C CE f=1.8GHz = S opt T =25 C amb P output power at 1 dB gain I =60mA V =4V -17 - dBm L(1dB) C CE compression Z =Z =50 S L f=1.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU660F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU660F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 11 January 2011 2 of 12