Product Information

BF994S,215

BF994S,215 electronic component of NXP

Datasheet
Transistors RF MOSFET N-CH DUAL GATE 20V VHF

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 3000
1 : USD 0.2419
N/A

Obsolete
0 - Global Stock

MOQ : 3000
Multiples : 3000
3000 : USD 0.2263
9000 : USD 0.2263
24000 : USD 0.2179
45000 : USD 0.2137
99000 : USD 0.2095
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Brand
Gate-Source Breakdown Voltage
Product Type
Factory Pack Quantity :
Height
Length
Width
Channel Mode
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with interconnected source and source. and substrate. APPLICATIONS VHF applications such as: handbook, halfpage d 43 VHF television tuners Professional communication equipment. g 2 g 1 PINNING PIN SYMBOL DESCRIPTION 1 2 1s, b source s,b 2 d drain Top view MAM039 3g gate 2 2 Marking code: MGp. 4g gate 1 1 Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V drain-source voltage 20 V DS I drain current 30 mA D P total power dissipation up to T =60 C 200 mW tot amb T junction temperature 150 C j Y transfer admittance f = 1 kHz I =10mA V =15V V =4V 18 mS D DS G2-S fs C input capacitance at gate 1 f = 1 MHz I =10mA V =15V V =4V 2.5 3 pF ig1-s D DS G2-S C feedback capacitance f = 1 MHz I =10mA V =15V V =4V 25 fF rs D DS G2-S F noise figure f = 200 MHz G =2mS B =B 1 dB S S Sopt I =10mA V =15V V =4V D DS G2-S July 1993 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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