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EE-SX198/199/1018/1025/1041/1042/1070/1071 Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output Stable sensing at temperatures as high as 95C (EE-SX1041, EE-SX1070) Compact model with a 5-mm wide slot (EE-SX1041) Model with 12-mm deep and 5-mm wide slot (EE-SX1042) Miniature model with a 2-mm wide slot (EE-SX1018) Low-profile model (5.4 mm high) with a 2.8-mm slot width (EE-SX1025) Ordering Information Appearance Sensing Slot Slot Sensing object Output Weight Part number method width depth configuration Transmissive 2mm 4.5 mm Opaque, 0.5 x Phototransistor Approx. EE-SX1018 1.5 mm min. 0.2 g 2.8 mm 4.4 mm EE-SX1025 3mm 7.5 mm Opaque, 0.5 x Approx. EE-SX198 2mm min. 0.6 g EE-SX199 3.4 mm 7.2 mm Opaque, 0.5 x EE-SX1071 2.1 mm min. 5mm 8.2 mm Opaque, 0.5 x EE-SX1041 2.2 mm min. 5mm 12 mm Opaque, 0.5 x Approx. EE-SX1042 2mm min. 0.8 g 8mm 8.2 mm Opaque, 0.5 x Approx. EE-SX1070 2.2 mm min. 0.6 gEE-SX198/199/1018/1025/1041/1042/1070/1071 EE-SX198/199/1018/1025/1041/1042/1070/1071 Specifications ABSOLUTE MAXIMUM RATINGS (T =25C(77F)) A Item Symbol Rated value Emitter Forward current I 50 mA* F Reverse voltage V 4V R Detector Collector-emitter V 30 V CEO voltage Collector current I 20 mA C Collector dissipation P 100 mW* C Ambient temperature Operating Topr -25 Cto85 C (-13 F to 185 F)** Storage Tstg -30C to 100C (-22F to 212F) *Refer to Engineering Data if the ambient temperature is not within the normal room temperature range. **The operating temperature of the EE-SX1041/1070 is -25 to 95C (-13F to 203F). CHARACTERISTICS (T =25C(77F)) A Item Symbol EE-SX1018/1025/1041/1042/1070/ EE-SX198/199 1071 Value Condition Value Condition Emitter Forward voltage V 1.2 V typ. I =30mA 1.2 V typ. I =20mA F F F 1.5 V max. 1.4 V max. Reverse current I 0.01 Atyp. V =4V 0.01 Atyp. V =4V R R R 10 Amax. 10 Amax. Peak emission wavelength 940 nm typ. I =20mA 940 nm typ. I =20mA p(L) F F Detector Dark current I 2nA typ. V =10V 0 x 2nA typ. V =10V 0 x D CE CE 200 nA max. 200 nA max. Peak spectral sensitivity 850 nm typ. V =10V 850 nm typ. V =10V p(P) CE CE wavelength Combination Light current (collector I 0.5 mA min. I =20mA 0.5 mA min. I =20mA L F F current) 14 mA max. V =10V 14 mA max. V =5V CE CE Collector-emitter saturated V (sat) 0.1 V typ. I =20mA 0.1 V typ. I =40mA CE F F voltage 0.4 V max. I =0.1mA 0.4 V max. I =0.5mA L L Rising time (See Note.) tr 4 styp. V =5V 4 styp. V =5V CC CC RR == 110000 RR == 110000 LL LL Falling time (See Note.) tf 4 styp. 4 styp. I =5mA I =5mA L L Note: The following illustrations show the rising time, tr, and the falling time, tf. R F V Input CC Input 0 + t V F 90% -- Output 10% Output 0 t tr tf R L