VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES VSMY2853RG VSMY2853G Package type: surface-mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 Peak wavelength: = 850 nm p High reliability High radiant power 2268226899 Very high radiant intensity Angle of half intensity: = 28 DESCRIPTION TM Suitable for high pulse current operation As part of the SurfLight portfolio, the VSMY2853 series are infrared, 850 nm emitting diodes based on GaAlAs Terminal configurations: gullwing or reverse gullwing surface emitter chip technology with extreme high radiant Package matches with detector VEMD2503X01 series intensities, high optical power and high speed, molded in Floor life: 4 weeks, MSL 2a, according to J-STD-020 clear, untinted plastic packages (with lens) for surface Material categorization: for definitions of compliance mounting (SMD). please see www.vishay.com/doc 99912 APPLICATIONS Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors IR touch panels IR illumination PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMY2853RG 50 28 850 10 VSMY2853G 50 28 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2853RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMY2853G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.3, 31-Jul-2018 Document Number: 83480 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY2853RG, VSMY2853G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 7, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient EIA / JESD51 R 250 K/W thJA 120 200 180 100 160 140 80 120 60 100 R = 250 K/W thJA 80 R = 250 K/W thJA 40 60 40 20 20 0 0 0 10 203040 50607080 90 100 0 1020 3040506070 8090 100 T - Ambient Temperature (C) 21890 21891 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V -1.6 1.9 V F p F Forward voltage I = 1 A, t = 100 s V -2.8 - V F p F Temperature coefficient of V I = 100 mA TK --1.5 - mV/K F F VF Reverse current I Not designed for reverse operation A R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -50- pF R J I = 100 mA, t = 20 ms I 27 50 75 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I - 350 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms -55- mW F p e Temperature coefficient I = 100 mA TK --0.12 - %/K F e of radiant power Angle of half intensity - 28 - deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 30 mA -30- nm F Temperature coefficient of I = 30 mA TK -0.25- nm/K p F p Rise time I = 100 mA, 10 % to 90 % t -10- ns F r Fall time I = 100 mA, 10 % to 90 % t -10- ns F f Rev. 1.3, 31-Jul-2018 Document Number: 83480 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F