End of Life April-2020 - Alternative Device: VSMY2893RGX01, VSMY2893GX01 VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH FEATURES Package type: surface-mount Package form: GW, RGW VSMF2893RGX01 VSMF2893GX01 Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 AEC-Q101 qualified Peak wavelength: = 890 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 25 Low forward voltage Suitable for high pulse current operation Terminal configurations: gullwing or reserve gullwing DESCRIPTION Package matches with detector VEMD2xx3X01 and VSMF2893X01 series are infrared, 890 nm emitting diodes VEMT2xx3X01 series in GaAlAs (DH) technology with high radiant power and high Floor life: 4 weeks, MSL 2a, according to J-STD-020 speed, molded in clear, untinted plastic packages (with lens) Material categorization: for definitions of compliance for surface mounting (SMD). please see www.vishay.com/doc 99912 APPLICATIONS IrDA compatible data transmission 3D TV IR touch panels Miniature light barrier Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMF2893RGX01 20 25 890 30 VSMF2893GX01 20 25 890 30 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMF2893RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMF2893GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.1, 30-Sep-2019 Document Number: 83484 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life April-2020 - Alternative Device: VSMY2893RGX01, VSMY2893GX01 VSMF2893RGX01, VSMF2893GX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 9, J-STD-020 T 260 C sd J-STD-051, leads 7 mm, Thermal resistance junction-to-ambient R 250 K/W thJA soldered on PCB 120 180 160 100 140 120 80 100 60 80 R = 250 K/W thJA R = 250 K/W thJA 40 60 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21343 21344 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERSITICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.25 1.4 1.6 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 V F p F I = 1 mA TK -1.8 mV/K F VF Temperature coefficient of V F I = 100 mA TK -1.1 mV/K F VF Reverse current V = 5 V I 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C 125 pF R J I = 100 mA, t = 20 ms I 10 20 30 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 180 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 40 mW F p e Temperature coefficient of I = 100 mA TK -0.35 %/K e F e Angle of half intensity 25 deg Peak wavelength I = 30 mA 870 890 910 nm F p Spectral bandwidth I = 30 mA 40 nm F Temperature coefficient of I = 30 mA TK 0.25 nm/K p F p Rise time I = 100 mA, 20 % to 80 % t 30 ns F r Fall time I = 100 mA, 20 % to 80 % t 30 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 12 MHz DC AC c Rev. 1.1, 30-Sep-2019 Document Number: 83484 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F