VS-10ETS...-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Base 2 Very low forward voltage drop cathode 2 150 C max. operating junction temperature Glass passivated pellet chip junction Designed and qualified according to 1 JEDEC -JESD 47 1 3 3 Cathode Anode Material categorization: for definitions of compliance 2L TO-220AC please see www.vishay.com/doc 99912 APPLICATIONS Input rectification PRIMARY CHARACTERISTICS I 10 A Vishay Semiconductors switches and output rectifiers F(AV) which are available in identical package outlines V 800 V to 1200 V R V at I 1.1 V F F DESCRIPTION I 160 A FSM High voltage rectifiers optimized for very low forward T max. 150 C J voltage drop with moderate leakage. Package 2L TO-220AC These devices are intended for use in main rectification Circuit configuration Single (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 12.0 16.0 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 10 A F(AV) V 800/1200 V RRM I 160 A FSM V 10 A, T = 25 C 1.1 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETS08-M3 800 900 0.5 VS-10ETS12-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 135 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated V applied 91 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 130 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1300 A s Revision: 23-Nov-17 Document Number: 96212 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10ETS...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 10 A, T = 25 C 1.1 V FM J Forward slope resistance r 20 m t T = 150 C J Threshold voltage V 0.82 V F(TO) T = 25 C 0.05 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 0.50 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Maximum junction and storage temperature range T , T -40 to +150 C J Stg Maximum thermal resistance, junction to case R DC operation 2.5 thJC C/W Maximum thermal resistance, junction to ambient R 62 thJA (PCB mount) Soldering temperature T 240 C S 2g Approximate weight 0.07 oz. 10ETS08 Marking device Case style 2L TO-220AC 10ETS12 10ETS.. Series 10ETS.. Series R (DC) = 2.5 C/W R (DC) = 2.5 C/W thJC thJC Conduction angle Conduction period DC 60 90 180 120 30 60 30 180 120 90 0 2 468 10 12 0264 8 10 12 14 16 18 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 23-Nov-17 Document Number: 96212 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 150 150 140 140 130 130 120 120 110 110 100 90 100 80 90 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)