TSSS2600 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES Package type: leaded Package form: side view Dimensions (L x W x H in mm): 3.6 x 2.2 x 5 Peak wavelength: = 950 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 25, horizontal 94 8672 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Package matched with detector TEST2600 DESCRIPTION Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TSSS2600 is an infrared, 950 nm emitting diode in GaAs Note technology, molded in a miniature, clear plastic package ** Please see document Vishay Material Category Policy: with side view lens. www.vishay.com/doc 99902 APPLICATIONS Infrared source in miniature light barriers or reflective sensor systems with short transmission distances and low forward voltage requirements. Matching with silicon PIN photodiodes or phototransistors (e.g. TEST2600) PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) tr (ns) e p TSSS2600 2.6 25 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSSS2600 Bulk MOQ: 5000 pcs, 5000 pcs/bulk Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 2.0 A p FSM Power dissipation P 170 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient Leads not soldered R 450 K/W thJA Rev. 1.7, 24-Aug-11 Document Number: 81042 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSSS2600 www.vishay.com Vishay Semiconductors 250 125 200 100 75 150 R thJA R thJA 100 50 50 25 0 0 0 20 40 60 80 100 0 20 40 60 80 100 94 8029 T - Ambient Temperature (C) 94 7916 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.25 1.6 V F p F Forward voltage I = 1.5 A, t = 100 s V 2.2 V F p F Temperature coefficient of V I = 100 mA TK - 1.3 mV/K F F VF Reverse current V = 5 V I 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 30 pF R j I = 100 mA, t = 20 ms I 12.6 3 mW/sr F p e Radiant intensity I = 1.5 A, t = 100 s I 25 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 20 mW F p e Temperature coefficient of I = 100 mA TK - 0.8 %/K e F e horizontal 25 deg 1 Angle of half intensity vertical 60 deg 2 Peak wavelength I = 100 mA 950 nm F p Spectral bandwidth I = 100 mA 50 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p I = 100 mA t 800 ns F r Rise time I = 1.5 A t 400 ns F r I = 100 mA t 800 ns F f Fall time I = 1.5 A t 400 ns F f Virtual source diameter d2 mm Rev. 1.7, 24-Aug-11 Document Number: 81042 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F